Reflective coating for a high bright light emitting diode

A light-emitting diode, high-brightness technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problem of high brightness of light-emitting diodes, and achieve the effect of improving brightness

Active Publication Date: 2012-07-11
LEXTAR ELECTRONICS CORP
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  • Abstract
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Problems solved by technology

[0003] However, the brightness of general light-emitting diodes is indeed not higher than that of known tungsten bulbs or fluorescent lamps. Therefore, if most of the light emitted by light-emitting diodes is diverged to the side and cannot be efficiently used, this is actually more exposed to light-emitting diodes. Shortcomings

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  • Reflective coating for a high bright light emitting diode
  • Reflective coating for a high bright light emitting diode
  • Reflective coating for a high bright light emitting diode

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Embodiment Construction

[0025] see Figure 1 to Figure 4 , is the first embodiment of the high brightness light emitting diode 1 of the present invention. The high brightness light emitting diode 1 of the present invention comprises a substrate 11 , a conductive layer 12 , a first semiconductor layer 13 , a light emitting layer 14 , a second semiconductor layer 15 , a first electrode 16 , a second electrode 17 and an insulating structure 19 . An upper plating layer 111 is formed on the substrate 11. In sequence, the conductor layer 12 is arranged on the upper plating layer 111, the first semiconductor layer 13 is arranged on the conductor layer 12, and the light emitting layer 14 is a multiple quantum well (Multiple Quantum Well, The MQW) structure is disposed on the first semiconductor layer 13 , and the second semiconductor layer 15 is disposed on the light emitting layer 14 , and the vertical light emitting diode 1 is formed in an upwardly stacked arrangement. Wherein, if the first semiconductor ...

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Abstract

A high bright light emitting diode comprises a substrate, a conductive layer, a first semiconductor layer, a luminous layer, a second semiconductor layer, a first electrode, a second electrode and an insulation structure. The conductive layer, the first semiconductor layer, the luminous layer and the second semiconductor layer are disposed upwards from an upper solder layer of the substrate in order. The first electrode is electrically connected to the conductive layer. The second electrode penetrates through the conductive layer, the first semiconductor layer and the luminous layer to make the upper solder and the second semiconductor layer electrically connected. The insulation structure comprises at least two passivation layers peripherally wrapping the second electrode. The thicknesses of the at least two passivation layers are conformed to the distributed Bragg reflection technique to make the passivation layers jointly used as a reflector with high reflectance. In the high bright light emitting diode of the invention, with the insulation structure wrapped on the second electrode as a reflector, the light scattering toward sides being generally concentrated to one single side, the brightness of the light emitting diode is substantially improved.

Description

technical field [0001] The invention relates to a light-emitting diode, in particular to a high-brightness light-emitting diode. Background technique [0002] With the rapid development of science and technology, people have more and more choices for lighting devices in life. From traditional tungsten filament bulbs to fluorescent lamps, lighting devices are constantly being introduced. In recent years, Light Emitting Diode (LED) has developed rapidly. Because of its advantages of low power consumption, long component life, no warm-up time and fast response, its application fields are becoming more and more extensive. [0003] However, the brightness of general light-emitting diodes is indeed not higher than that of known tungsten bulbs or fluorescent lamps. Therefore, if most of the light emitted by light-emitting diodes is diverged to the side and cannot be efficiently used, this is actually more exposed to light-emitting diodes. Shortcomings. Therefore, the suppliers of...

Claims

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Application Information

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Patent Type & AuthorityApplications(China)
IPC IPC(8): H01L33/10H01L33/00
CPCH01L33/46H01L33/382
Inventor黄坤富张峻荣郭奇文陈俊荣方国龙赵志伟
OwnerLEXTAR ELECTRONICS CORP