Reflective coating for a high bright light emitting diode
A light-emitting diode, high-brightness technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problem of high brightness of light-emitting diodes, and achieve the effect of improving brightness
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[0025] see Figure 1 to Figure 4 , is the first embodiment of the high brightness light emitting diode 1 of the present invention. The high brightness light emitting diode 1 of the present invention comprises a substrate 11 , a conductive layer 12 , a first semiconductor layer 13 , a light emitting layer 14 , a second semiconductor layer 15 , a first electrode 16 , a second electrode 17 and an insulating structure 19 . An upper plating layer 111 is formed on the substrate 11. In sequence, the conductor layer 12 is arranged on the upper plating layer 111, the first semiconductor layer 13 is arranged on the conductor layer 12, and the light emitting layer 14 is a multiple quantum well (Multiple Quantum Well, The MQW) structure is disposed on the first semiconductor layer 13 , and the second semiconductor layer 15 is disposed on the light emitting layer 14 , and the vertical light emitting diode 1 is formed in an upwardly stacked arrangement. Wherein, if the first semiconductor ...
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