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Method for preparing mixed solar cell based on reversal structure of GaN nanorods

The technology of a solar cell and its manufacturing method, which is applied in the field of microelectronics, can solve the problems of unfavorable large-scale application, low light transmittance, and high production cost, and achieve the effects of improving photoelectric conversion efficiency, high light transmittance, and reducing production cost

Inactive Publication Date: 2014-06-04
XIDIAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This structure has three disadvantages: First, GaN nanocolumns are grown on a nitride substrate, and the cost of the substrate is very high. The price of a 2-inch original film on the market is more than 1,000 yuan, which is very unfavorable for large-scale applications. Secondly, because metal electrodes are used in the upper and lower layers of this structure, and a transparent conductive electrode indium tin oxide ITO layer is also used in the upper part, wherein the light transmittance of ITO is about 65%, resulting in low photoelectric conversion efficiency ; Again, the substrate of this structure uses nitride, and the lower layer needs to be made of metal electrodes, which also has the disadvantages of high manufacturing cost and low light transmittance, resulting in a decrease in the photoelectric conversion efficiency of the device

Method used

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  • Method for preparing mixed solar cell based on reversal structure of GaN nanorods
  • Method for preparing mixed solar cell based on reversal structure of GaN nanorods

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Example 1: Making a hybrid solar cell with a nanocolumn height of 600nm and a pitch of 400nm:

[0031] Step 1, using the ECR-PEMOCVD method to grow n-GaN layer on the indium tin oxide ITO conductive substrate, such as figure 2 a.

[0032] 1.1) Using hydrogen as the carrier gas and using high-purity nitrogen as the nitrogen source to grow a GaN buffer layer with a thickness of 75 nm on the indium tin oxide ITO, the growth process conditions are: nitrogen flow rate is 70 sccm, trimethylgallium flow rate is 0.4 sccm, The input microwave power is 650W, and the reaction temperature is 150°C;

[0033]1.2) Keep the gas flow rate, gas composition and microwave power constant, raise the substrate temperature to 350°C, and grow an n-GaN layer on the GaN buffer layer. The n-GaN layer has a thickness of 1.5 μm and a carrier concentration of 1×1017cm-3.

[0034] Step 2, put the indium tin oxide ITO conductive substrate grown with n-GaN into acetone, perform ultrasonic cleaning f...

Embodiment 2

[0044] Example 2: Making a hybrid solar cell with a nanocolumn height of 650nm and a pitch of 450nm:

[0045] Step 1, using the ECR-PEMOCVD method to grow n-GaN layer on the indium tin oxide ITO conductive substrate, such as figure 2 a.

[0046] First, using hydrogen as the carrier gas and high-purity nitrogen as the nitrogen source, the flow rate of nitrogen gas is 80 sccm, the flow rate of trimethylgallium is 0.5 sccm, the input microwave power is 600W, and the reaction temperature is 200°C. A GaN buffer layer with a thickness of 70nm is grown on tin ITO;

[0047] Then, keeping the gas flow rate, gas composition and microwave power constant, the substrate temperature was increased to 400°C, and the GaN buffer layer was grown with a thickness of 2 μm and a carrier concentration of 4×10 17 cm -3 n-GaN layer.

[0048] Step 2: Place the indium tin oxide ITO conductive substrate grown with n-GaN into acetone and absolute ethanol in sequence for ultrasonic cleaning for 2.5 mi...

Embodiment 3

[0059] Example 3: Making a hybrid solar cell with a nanocolumn height of 700nm and a spacing of 500nm:

[0060] Step A, using the ECR-PEMOCVD method to grow n-GaN layer on the indium tin oxide ITO conductive substrate, that is, first use hydrogen as the carrier gas, use high-purity nitrogen as the nitrogen source, and use the nitrogen flow rate as 90sccm, trimethylgallium The flow rate is 0.6sccm, the input microwave power is 700W, and the reaction temperature is 185°C, a GaN buffer layer with a thickness of 80nm is grown on the indium tin oxide ITO; The bottom temperature rises to 380°C, the thickness of the GaN buffer layer is 2.5 μm, and the carrier concentration is 1×10 18 cm -3 n-GaN layer, such as figure 2 a.

[0061] In step B, put the indium tin oxide ITO conductive substrate grown with n-GaN into acetone for 3 minutes for ultrasonic cleaning, then put it into absolute ethanol for 3 minutes, and finally rinse with deionized water for 15 minutes.

[0062] Step C, s...

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Abstract

The invention discloses a method for preparing a mixed solar cell based on a reversal structure of GaN nanorods, mainly solving the problems of low efficiency and high cost of the current solar cell. The mixed solar cell comprises a glass protective layer (1), an indium tin oxide (ITO) conductive layer (2), a GaN buffer layer (3), n-GaN nanorods (4), poly(3-hexylthiophene) (P3HT) (5), and poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonate) (PEDOT:PSS) (6), wherein the ITO conductive layer (2) is arranged on the glass protective layer (1), forming ITO transparent conductive glass; the GaN buffer layer (3) extends to the ITO conductive layer (2); the n-GaN nanorods (4) extend to the GaN buffer layer (3), with a height of 600 nm-700 nm and an interval of 400 nm-500 nm; the P3HT (5) is arranged on the n-GaN nanorods (4); and the PEDOT:PSS (6) is arranged on the P3HT (5). The mixed solar cell of the invention has the advantages of simple structure, low cost, and high efficiency in converting solar radiation into electricity, which can be used in commercial and civil power generating systems.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and relates to the manufacture of a solar cell, in particular to a method for manufacturing a bulk heterojunction inverted structure solar cell based on GaN nanocolumns and using inorganic and organic materials as materials. Specifically, a GaN nanocolumn structure is formed by etching on a GaN epitaxial layer based on sapphire or indium tin oxide ITO conductive glass, and an organic photovoltaic conductive film is spin-coated on it to achieve photovoltaic characteristics. technical background [0002] The development of modern industry is increasingly dependent on energy, and how to obtain energy has gradually become the primary concern of all countries. On the one hand, because the total amount of fossil fuels is difficult to increase globally in a short period of time, and as the amount of mining continues to increase, the difficulty of obtaining them also increases. On the other han...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0352H01L31/18
CPCY02P70/50
Inventor 冯倩张璐邢韬李倩郝跃
Owner XIDIAN UNIV
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