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Physical vapor deposition equipment

A technology of physical vapor deposition and equipment, applied in ion implantation plating, metal material coating process, coating, etc., can solve problems such as dropping and long process time, and reduce sticking problems and root-like protrusions The effect of reducing defects and process problems

Inactive Publication Date: 2012-09-19
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology

[0004] However, with the interconnection (Interconnection) and later packaging (Packaging) requirements of some products, when the aluminum pad (Aluminum Pad) is formed, the thickness of the deposited aluminum metal layer is often greater than 20,000 angstroms, and the accompanying process time is also Relatively long, causing the ions in the plasma to bombard the target and the atoms that fall will also fall on the wafer holding ring

Method used

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Embodiment Construction

[0026] In order to better understand the physical vapor deposition equipment of the present invention, the structure of physical vapor deposition equipment in the prior art is described first.

[0027] figure 1 It is a cross-sectional view of a physical vapor deposition equipment process chamber in the prior art. figure 2 yes figure 1 The temperature change diagram of the wafer support base when the physical vapor deposition equipment deposits a 40,000 angstrom aluminum metal layer.

[0028] Please refer to figure 1 , the top of the process chamber 100 is provided with a target 101, the bottom of the process chamber 100 is provided with a wafer carrying base 103, a wafer 104 is placed on the wafer carrying base 103, and the wafer 104 is fixed in the process chamber The wafer fixing ring 102 on the side wall of the body 100 is fixed on the wafer supporting base 103 . When the physical vapor deposition equipment starts to deposit, the plasma (not shown in the figure) bombar...

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Abstract

The invention provides a piece of physical vapor deposition equipment which comprises a process cavity, a wafer bearing base seat arranged at the bottom of the process cavity, a process cavity cover arranged at the four sides of the process cavity, a wafer fixing ring arranged above the wafer bearing base seat, and a deposition ring arranged above the wafer fixing ring. The outer circumference of the wafer fixing ring is fixed on the side wall of the process cavity so as to enable a wafer to be processed to be fixed on the wafer bearing base seat, and the to-be-deposited area of the wafer is exposed through the inner circumference of the wafer fixing ring. The outer circumference of the deposition ring is fixed on the side wall of the process cavity.

Description

technical field [0001] The present invention relates to a semiconductor manufacturing equipment, and in particular to a physical vapor deposition (Physical Vapor Deposition, PVD) equipment. Background technique [0002] In the semiconductor manufacturing process, there are two main film-forming methods of thin films: physical vapor deposition and chemical vapor deposition. The physical vapor deposition method can be divided into two types: evaporation method (Evaporation) and sputtering method (Sputtering). Among them, the evaporation is carried out in the evaporation chamber, and the deposition of the film is carried out through the saturated vapor pressure of the evaporation source at high temperature; the sputtering is carried out in the plasma chamber, and the ion bombardment generated by the plasma (Bombardment) Target (Target), the bombarded target atoms are sputtered and deposited on the surface of the wafer to form a thin film. Since the deposition method of sputte...

Claims

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Application Information

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IPC IPC(8): C23C14/22
Inventor 赵波刘玮荪
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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