Method for enlarging corrosion defect process window of dry etching of aluminum wire

Abstract

The invention discloses a method for enlarging a corrosion defect process window of dry etching of an aluminum wire. The method specifically comprises the following steps of: forming a composite metal structure on a semiconductor substrate, wherein the composite metal structure sequentially consists of a silicon oxide layer, a first barrier layer, a metal layer, a second barrier layer, an insulating antireflection layer and a patterned photoresist material layer; etching the composite metal structure on the semiconductor substrate to form a patterned composite metal structure; removing the photoresist material layer from the surface of the composite metal structure on the semiconductor substrate and a polymer generated on the surface of the top of the composite metal structure by the etching; and removing the polymer generated by the etching from the sidewall of the composite metal structure by utilizing argon plasmas and oxygen plasmas. The method has the advantages that the anticorrosion characteristics of the aluminum wire can be improved, so that the corrosion defect process window of the aluminum wire is enlarged, and the probability of wafer scrap caused by a corrosion defect is reduced.

Description

technical field [0001] The invention relates to an aluminum wire etching method in the field of semiconductor manufacturing, in particular to a method for expanding the process window of aluminum wire dry etching corrosion defects. Background technique [0002] The back-end aluminum wire wiring process is widely used in the chip production process with a line width of 0.15um or more. The aluminum wire etching process is the key. This is not only because this process determines the formation of the aluminum wire pattern, but also because the aluminum wire etching process The defects produced during the etching process have a great impact on the chip yield. One of the aluminum wire corrosion defects is known as the number one killer of the aluminum wire chip process. The mechanism of the defect is that after the aluminum wire is etched, it is exposed to the atmosphere. Under the action of water vapor in the atmosphere, the aluminum and the chlorine ions left in the etching rea...

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Problems solved by technology

[0002]The back-end aluminum wire wiring process is widely used in the chip production process with a line width of 0.15um or more, and the aluminum wire etching process is the key, not only because of this The process determines the formation of the aluminum wire pattern, and because the defects generated by the aluminum wire etching process have a great impact on the chip yield, one of the aluminum wire corrosion defects is called the number one killer of the aluminum wire chip process. The mechanism is that after the etching of the aluminum wire is completed, the aluminum exposed to the atmosphere and the residual chlorine ions of the etching reaction undergo a cyclic reaction under the action of water vapor in the atmosphere to form Al2O3 hydrate, which causes the aluminum wire to break or the conductive area Shrinkage, causing chip failure or reduced reliability

[0003]Since chips affected by corrosion defects may not cause chip failure, but have potential EM (ELECTROMIGRATION Electromigration) risk of reduced reliability, so the factory The treatment of corrosion defects is generally the entire wafer. If a chip is found to have corrosion defects, the entire wafer will be scrapped, which will have a huge impact on the yield of the production line.

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