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Array substrate, liquid crystal display device and manufacture method for array substrate

The technology of an array substrate and a manufacturing method, which is applied in the field of liquid crystal display, can solve problems such as low resistivity anti-electromigration ability, TFT pixels cannot be fully charged, and wire patterns cannot be produced, so as to achieve high processing efficiency and low manufacturing effect.

Active Publication Date: 2012-10-17
CHANGSHA HKC OPTOELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

With the trend and requirements of large-scale display terminals such as LCD TVs, high resolution, and high-speed driving frequency, panel developers have to face the problem of resistance and resistance / capacitance time delay caused by array systems; and aluminum wires have Higher resistivity (~4μΩcm) prevents TFT pixels from fully charging, and this phenomenon will become more obvious with the wide application of high-frequency addressing (≥120Hz)
[0003] Compared with aluminum, copper wire has lower resistivity (~2μΩcm) and good electromigration resistance, which has attracted the interest of many material and process engineers and has been applied in actual mass production; but in the etching process, after ion etching (RIE ,reactive ion etch), copper metal will generate copper fluoride (CuF x ) and copper chloride (CuCl x ), these two substances are solid below 200°C and will not vaporize, so copper metal cannot be used to make wire patterns by dry etching like aluminum metal

Method used

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  • Array substrate, liquid crystal display device and manufacture method for array substrate
  • Array substrate, liquid crystal display device and manufacture method for array substrate
  • Array substrate, liquid crystal display device and manufacture method for array substrate

Examples

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Embodiment 1

[0039] The metal electrode of this embodiment includes an adhesive layer 300, and a conductive layer 200 arranged on the adhesive layer 300. The conductive layer 200 can be made of copper, silver, gold and other metals with excellent electrical conductivity. The conductive layer 200 contains 0.7- 2at% vanadium, the conductive layer 200 is provided with VO x The barrier layer 400 of the material, the barrier layer 400 can prevent the conductive layer 200 from being oxidized.

[0040] Taking copper as an example, the metal electrode can be made by Cu-V alloy target, the specific steps are as follows (see image 3 ):

[0041] A: The content of vanadium (V) in the Cu-V alloy target is 8 at.%, to maintain the Cu-V alloy target in a stable metal solid solution state, see figure 2 , we can know the temperature required for Cu-V alloy targets with different ratios to reach the metal solid solution state. Of course, the composition range of vanadium in Cu-V alloy target can be exte...

Embodiment 2

[0048] In this embodiment, the conductive layer 200 of the metal electrode includes the first conductive layer 210 integrally formed with the adhesive layer 300, and the VO x The barrier layer 400 of material is integrally formed with the second conductive layer 220 , and the third conductive layer 230 is independently disposed between the first conductive layer 210 and the second conductive layer 220 . The first conductive layer 210 and the second conductive layer 220 contain 0.7-2 at % vanadium. The independent third conductive layer 230 can be made of high-purity metals, such as copper, silver, gold, etc., to improve the conductive performance of the conductive layer 200 .

[0049] Taking copper as an example, the metal electrode can be made by sputtering two Cu-V alloy targets and one sputtering pure copper target. The specific steps are as follows (see Figure 4 ):

[0050] A: The content of vanadium (V) in the Cu-V alloy target is 8 at.%, to maintain the Cu-V alloy tar...

Embodiment 3

[0061] This embodiment discloses another method for manufacturing the above-mentioned array substrate. Pure vanadium and pure copper are placed in different sputtering chambers, a layer of vanadium is sputtered first, then a layer of copper is sputtered, and finally a layer of copper is sputtered. Vanadium, under the vacuum and temperature environment described in the examples, the vanadium on the lower surface generates VO x Si y , the vanadium on the upper surface is processed by oxygen ashing to generate VO x , the middle layer of copper forms the conductive layer, using this method, the vanadium content in the conductive layer will be significantly reduced, and the conductive performance of the conductive layer will be improved.

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Abstract

The invention discloses an array substrate, a liquid crystal display device and a manufacture method for an array substrate. The thin film transistor liquid crystal display (TFT-LCD) array substrate comprises a metal electrode, wherein the metal electrode comprises a conducting layer; one surface of the conducting layer is provided with a sticking layer made of VOxSiy material; and the other surface of the conducting layer is provided with a blocking layer. On one surface on which the metal electrode is positioned, metal vanadium and silicon-contained material (such as glass and an n+a-Si layer) in the array substrate generate chemical reaction to generate a VOxSiy material sticking layer; the metal electrode can be firmly fixed on glass base material; and meanwhile, VOxSiy has a low contact resistance to enable the metal layer to have better conduction performance. The invention also discloses a manufacture method, which is characterized in that only a copper-vanadium alloy target needs to be sputtered to the silicon-contained material of the array substrate, the metal electrode with the VOxSiy material sticking layer can be formed under certain vacuum and temperature condition, and the manufacture method is simple and efficient.

Description

technical field [0001] The present invention relates to the field of liquid crystal display, and more specifically, relates to an array substrate, a liquid crystal display device and a manufacturing method of the array substrate. Background technique [0002] The metal wires conventionally used in array substrates for liquid crystal display (LCD) panels are aluminum wires, and the performance characteristics and operational characteristics of the array substrate depend in part on the materials from which the elements of the array substrate are formed. With the trend and requirements of large-scale display terminals such as LCD TVs, high resolution, and high-speed driving frequency, panel developers have to face the problem of resistance and resistance / capacitance time delay caused by array systems; and aluminum wires have The high resistivity (~4μΩcm) prevents the TFT pixel from being fully charged, and this phenomenon will become more obvious with the wide application of hi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/1343G02F1/1362H01L29/786H01L29/45H01L29/49H01L21/77
CPCG02F1/1362H01L29/49H01L29/786G02F1/1343H01L29/45H01L29/4908H01L29/458G02F1/13439
Inventor 寇浩
Owner CHANGSHA HKC OPTOELECTRONICS CO LTD