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Integrated circuit structure including a copper-aluminum interconnect and method for fabricating the same

A technology of integrated circuits and circuits, used in circuits, electrical components, electrical solid devices, etc.

Inactive Publication Date: 2012-10-31
NAN YA TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the diffusion of copper in integrated circuit materials (such as silicon and silicon oxide) is quite rapid, so it is impossible to directly replace aluminum wires with copper wires in integrated circuits

Method used

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  • Integrated circuit structure including a copper-aluminum interconnect and method for fabricating the same
  • Integrated circuit structure including a copper-aluminum interconnect and method for fabricating the same
  • Integrated circuit structure including a copper-aluminum interconnect and method for fabricating the same

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Embodiment Construction

[0015] figure 1 A schematic diagram showing a copper-aluminum circuit connection according to an embodiment of the present invention. Figure 2-3 A method for fabricating an integrated circuit structure according to an embodiment of the present invention is shown. refer to figure 1 , the copper-aluminum circuit connection 10 includes a copper layer 16 , a barrier layer 50 and an aluminum layer 52 , and the barrier layer 50 connects the copper layer 16 and the aluminum layer 52 .

[0016] with reference Figure 1-3 , in an embodiment of the present invention, an integrated circuit structure 100 includes the copper-aluminum circuit connection 10 , a first dielectric layer 14 and a second dielectric layer 18 . The copper layer 16 is disposed in the first dielectric layer 14, the second dielectric layer 18 is disposed on the first dielectric layer 14 and the copper layer 16 and forms a hole 20, the hole 20 exposes the copper layer 16 , the barrier layer 50 covers the bottom su...

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Abstract

An integrated circuit structure including a copper-aluminum interconnect with a barrier layer including a titanium nitride layer and a method for fabricating the same are disclosed. The method for fabricating an integrated circuit structure including a copper-aluminum interconnect according to the present invention comprises the steps of providing a copper (Cu) layer; forming a barrier layer connected to the copper layer, wherein the barrier layer comprises a first layer including a tantalum layer and a tantalum nitride layer and a second layer including a titanium nitride layer, the first layer contacts the copper layer and is disposed between the copper layer and the second layer, and the barrier layer has a recess correspondingly above the copper layer; and forming an aluminum (Al) layer disposed in the recess. The integrated circuit structure including the copper-aluminum interconnect provides effective barrier to the copper and aluminum diffusion.

Description

technical field [0001] The invention relates to an integrated circuit structure including copper-aluminum circuit wiring and its preparation method, in particular to an integrated circuit structure including copper-aluminum circuit wiring with a barrier layer and its preparation method. Background technique [0002] Aluminum (Al) and its alloys have been widely used in the preparation of circuit wiring in integrated circuit structures. As the size of circuit elements shrinks, the number of elements connected to circuits continues to increase, requiring advanced circuit designs that use very thin circuit connections. However, electromigration and thermally induce voiding phenomena of aluminum and its alloys limit the application in high-density circuit connections. In addition, another important problem of aluminum alloy is that its resistance is higher than that of other conductive materials. [0003] In order to avoid the disadvantages of aluminum and its alloys, other me...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/532H01L21/768
CPCH01L23/53228H01L21/76856H01L23/53223H01L21/76846H01L2924/0002H01L2924/00
Inventor 苏国辉陈逸男刘献文
Owner NAN YA TECH
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