a memory

Abstract

The invention relates to a memory body which is a NAND gate memory device containing NAND gate memory cell arrays, wherein each memory cell contains a charge-trapping structure formed on a lightly doped substrate area. With the combination of a set voltage which is previously applied, a relatively low programmed voltage can be applied to program a selected memory cell of the NAND gate memory cell. The set voltage is applied on the substrate for initialized inversion. Inversion in the substrate results in that electrons in a selected memory cell channel are changed into thermoelectrons. The result is that relatively low programmed voltage can make a grid of the selected memory cell have enough energy thermoelectrons to penetrate into the charge-trapping structure of the selected memory cell.

Description

technical field [0001] The invention relates to a flash memory technology, in particular to a flash memory suitable for low-voltage programming and erasing operations in a NAND gate configuration. Background technique [0002] Flash memory is a type of non-volatile integrated circuit memory technology. Traditional flash memory uses floating gate memory cells. As the density of memory devices increases, floating gate memory cells get closer together, and the interaction of charges stored in adjacent floating gates will cause problems, thus forming a limitation, making the use of floating gate flash memory Density cannot be increased. Another type of memory cell used in flash memory is called a charge-trapping memory cell, which uses a charge-trapping layer instead of a floating gate. Charge-trapping memory cells use charge-trapping materials, which do not cause mutual influence between individual memory cells like floating gates, and can be applied to high-density flash me...

AI Technical Summary

Problems solved by technology

This additional high-voltage transistor and its companion transistors for logic and other data flow in the same integrated circuit create increased process complexity

This will increase the manufacturing cost of the device

[0005] This shows that above-mentioned existing flash memory obviously still has inconvenience and defect in structure and use, and urgently needs to be further improved

In order to solve the above-mentioned problems, the relevant manufacturers have tried their best to find a solution, but no suitable design has been developed for a long time, and the general products do not have a suitable structure to solve the above-mentioned problems. This is obviously related. The problem that the industry is eager to solve

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