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Plasma reactor

A plasma reactor and reaction chamber technology, applied in the field of ion reactors, can solve the problems of decreased yield and poor uniformity, and achieve the effect of ensuring effectiveness

Active Publication Date: 2015-06-24
ADVANCED MICRO FAB EQUIP INC CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Since the semiconductor process part is circular, the area of ​​the outer ring is larger, and the poor uniformity of each process link in the edge part will lead to a significant drop in yield

Method used

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  • Plasma reactor
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Embodiment Construction

[0021] Hereinafter, in conjunction with the accompanying drawings, a preferred embodiment is described in detail to further illustrate the present invention.

[0022] A plasma reactor includes a reaction chamber. An installation base is arranged in the reaction chamber. The installation base includes an electrode connected to a first radio frequency generator. An electrostatic chuck is fixed above the electrode to place the substrate to be processed. The electrostatic chuck includes an embedded electrode, which is arranged on the edge of the electrostatic chuck and is connected to an external second radio frequency generator through a wire, which passes through the electrode under the electrostatic chuck.

[0023] One of the embodiments:

[0024] Such as figure 1 As shown, the buried electrode 1 is arranged on the edge of the electrostatic chuck and is connected to an external second radio frequency generator through a wire. The wire passes through the lower electrode in the base bel...

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Abstract

The invention discloses a plasma reactor which comprises a reaction cavity. An installing base is arranged in the reaction cavity, an electrode is arranged in the installing base and connected with a first radio frequency generator, and a static sucker is fixed above the electrode and used for placing a substrate to be processed. The static sucker comprises an embedded electrode, the embedded electrode is arranged at the edge of the static sucker and connected with an external second radio frequency generator through an electric wire, and the electric wire penetrates through the electrode below the static sucker. The plasma reactor can compensate etching / deposit rate of the edge of the static sucker, and effectiveness of the static sucker is guaranteed.

Description

Technical field [0001] The invention relates to an electrostatic chuck, in particular to a plasma reactor. Background technique [0002] The edge effect of semiconductor process parts is a problem that plagues the semiconductor industry. The so-called edge effect of semiconductor process parts refers to that in the plasma treatment process, since the plasma is controlled by the electric field, the field strength at the edges of the upper and lower poles will be affected by the outside, and there is always a part of the electric field line bending, which leads to the field strength at the edge of the electric field Unevenness, which in turn leads to uneven plasma concentration in this part. In this case, there is also a circle of uneven processing area around the produced semiconductor process parts. [0003] Since the semiconductor process parts are round, the larger the outer ring area, the poor uniformity of each process link in the edge part will result in a significant drop i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/20
Inventor 欧阳亮陶铮倪图强松尾裕史尹志尧
Owner ADVANCED MICRO FAB EQUIP INC CHINA