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Deep silicon etching method

A technology of deep silicon etching and photolithography, which is applied in the fields of decorative art, gaseous chemical plating, microstructure technology, etc., can solve the problem of steepness deviation of deep silicon etching process, and achieve the reduction of sidewall morphology effect of change

Inactive Publication Date: 2014-09-03
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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Problems solved by technology

[0004] In view of the defects in the above-mentioned prior art, the purpose of the present invention is to propose a deep silicon etching method to solve the problem of steepness deviation caused by the deep silicon etching process

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Embodiment Construction

[0024] In order to meet the needs of the development of semiconductor and MEMS device applications, in order to effectively overcome the micro loading effect of the BOSCH process in deep silicon etching, and improve the steepness of the overall size of the pattern during release. The invention proposes a deep silicon etching method.

[0025] The deep silicon etching method of the present invention is especially suitable for the situation where the etched patterns have multiple widths and have large differences. As is well known, the deep silicon etching process includes: Ⅰ designing the pattern of the photolithography plate, Ⅱ forming a mask on the sample to be processed according to the pattern of the photolithography pattern designed, Ⅲ performing deep silicon ICP (inductance) on the sample to be processed under the mask. plasma) etching to form the desired structure. On this basis, the deep silicon etching method described in the present invention proposes improvement meas...

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Abstract

The invention discloses a deep silicon etching method, comprising the following steps of: s1, designing a photoetching plate pattern provided with grooves which are different in width, partitioning the grooves by virtue of thin lines along the width direction of the grooves, and enabling the partitioned grooves to be the same in width; s2, forming a mask on a to-be-machined sample according to the designed photoetching plate pattern; and s3, performing deep silicon ICP (inductively coupled plasma) etching on the to-be-machined sample under the mask, and etching off the mask part formed by the thin fines simultaneously. Via the application of the technical scheme of the invention, the appearance change of a sidewall caused by the large dimensional difference of the widths of the grooves during the deep silicon etching can be effectively reduced, and the steepness deviation of the sidewall is controlled to be less than 1 mu m.

Description

technical field [0001] The invention belongs to the field of semiconductor and MEMS device processing, and in particular relates to a new method for reducing the variation of sidewall morphology caused by the difference in opening size in deep silicon etching. Background technique [0002] The development of semiconductor and MEMS (Micro-Electro-Mechanical Systems, Micro-Electro-Mechanical Systems) device technology largely depends on the continuous progress of micro-nano processing technology. With the general adoption and continuous development of high aspect ratio dry etching technology, bulk silicon MEMS devices have also been more and more widely used; however, many bulk silicon MEMS devices have structures of different sizes, which are subject to the Bosch (BOSCH) process Influenced by the micro loading (micro-loading) effect, only the side wall steepness of a certain size structure can be guaranteed when the structure is released, which has a great impact on the perfo...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02B81C1/00G03F7/00
Inventor 付思齐时文华王敏锐张宝顺
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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