Projection process and structure thereof

Abstract

The invention provides a projection process adopting a substrate and comprising the following steps of: forming a copper-containing metal layer; forming a light resistance layer; patterning the light resistance layer to form a plurality of openings; forming a plurality of copper projections in the openings, wherein the copper projections respectively have a first top face; forming a conduction joining layer containing a nickel layer and a joining layer, wherein the conduction joining layer has a second top face; removing the light resistance layer; forming a lower projection metal layer, wherein the lower projection metal layer has a first peripheral wall, the copper projections respectively have a second peripheral wall, a holding space is arranged between the conduction joining layer and a first protection layer of the substrate, the holding space surrounds the first peripheral wall and the second peripheral wall, and the holding space is provided with a first holding part and a second holding part; forming a second protection layer; and removing a part of the second protection layer to form a first protection ring through the second protection layer located at the first holding part and form a second protection ring through the second protection layer located at the second holding part.

Description

technical field [0001] The present invention relates to a bump technology, in particular to a bump technology capable of preventing short circuit. Background technique [0002] Such as Figure 1A to Figure 1H , the existing conventional bumping process includes at least the following steps: first, refer to Figure 1A , providing a substrate 10, the substrate 10 has a surface 11, a plurality of pads 12 disposed on the surface 11 and a protective layer 13 formed on the surface 11, the protective layer 13 exposes the pads 12; then, see Figure 1B , forming a copper-containing metal layer 20 and the pads 12 and the protective layer 13; after that, please refer to Figure 1C , forming a photoresist layer 30 on the copper-containing metal layer 20; then, please refer to Figure 1D , pattern the photoresist layer 30 to form a plurality of openings 31; after that, please refer to Figure 1E , forming a plurality of copper bumps 40 in the openings 31, each of which copper bumps 4...

AI Technical Summary

Problems solved by technology

[0003] It can be seen that the above-mentioned existing bump technology obviously still has inconvenience and defects in structure and use, and needs to be further improved urgently.

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