One-chip type metal-oxide semiconductor field effect transistor-Schottky diode element

Abstract

A one-chip type metal-oxide semiconductor field effect transistor-Schottky diode element comprises a chip, metal-oxide semiconductor field effect transistors, Schottky diodes and a terminal structure. The chip is divided into a transistor area, a diode area and a terminal area. The metal-oxide semiconductor field effect transistors are arranged on the transistor area. The Schottky diodes are arranged on the diode area. The terminal structure is arranged on the terminal area, the transistor area and the diode area are separated by the terminal area, and the metal-oxide semiconductor field effect transistors and the Schottky diodes share the terminal structure.

Description

technical field [0001] The present invention relates to a semiconductor element, and in particular to a monolithic metal oxide semiconductor field effect transistor-Schottky diode element. Background technique [0002] For the known high-efficiency DC / DC converter application technology, Schottky diodes (Schottky diode) are integrated in semiconductor power elements such as metal oxide semiconductor field effect transistors (metal oxide silicon field effect transistors, MOSFETs), making Schottky The base diode and the metal oxide semiconductor field effect transistor are arranged in parallel. In this way, the on-resistance and gate capacitance can be reduced, thereby reducing power loss and increasing the switching speed of semiconductor power elements. [0003] With the miniaturization of electronic components, an integrated monolithic component is required to reduce space occupation. [0004] Two forms of integrating Schottky diodes with MOSFETs are known. [0005] One ...

AI Technical Summary

Problems solved by technology

Since the Schottky diode and the metal oxide semiconductor field effect transistor are fabricated on different chips respectively, and terminal structures are arranged around the Schottky diode and the metal oxide semiconductor field effect transistor respectively, it is necessary to set additional bonding wires to Electrically connect the Schottky diode and the metal-oxide-semiconductor field-effect transistor, which will increase the parasitic inductance value and affect the performance of the device

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