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Semiconductor light emitting element and method for manufacturing same

A technology of light-emitting components and semiconductors, which is applied in the direction of semiconductor devices, semiconductor lasers, electrical components, etc., can solve problems such as increased costs, and achieve the effect of wide luminous wavelength width and high luminous efficiency

Inactive Publication Date: 2015-04-15
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The light radiated from the rear surface of the SLD can be recovered to a certain extent by installing a mirror or the like inside the assembly package, but in this case, the cost of the package increases

Method used

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  • Semiconductor light emitting element and method for manufacturing same
  • Semiconductor light emitting element and method for manufacturing same
  • Semiconductor light emitting element and method for manufacturing same

Examples

Experimental program
Comparison scheme
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Embodiment approach

[0030] Hereinafter, regarding the semiconductor light-emitting element and its manufacturing method according to the embodiment of the present invention, a blue-violet SLD (central emission wavelength: 405 nm) using a hexagonal GaN-based semiconductor is taken as an example, referring to Figure 1 side to explain.

[0031] figure 1 (a)-(c) are figures which show the blue-violet SLD which concerns on embodiment of this invention. figure 1 (a) is a top view when seeing the SLD of this embodiment from above a board|substrate. figure 1 (b) is along figure 1 (a) A cross-sectional view of the SLD taken along line Ib-Ib and cut in a direction perpendicular to the paper. figure 1 (c) means along figure 1 (a) A cross-sectional view of the SLD of the present embodiment when cut along the line Ic-Ic and in a direction perpendicular to the paper surface (viewed from the light emitting direction). exist figure 1

[0032] (c) shows a cross-section of the vicinity of the light-em...

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Abstract

A semiconductor light-emitting element includes: a substrate; and a nitride semiconductor multilayer film provided on an upper surface of the substrate and including an active layer. A recess, a stepped portion, or a protruding portion is formed in an active layer or a layer that contacts a lower surface of the active layer. A ridge stripe, which has a front end facet and a rear end facet and serves as an optical waveguide, is formed in an upper part of the nitride semiconductor multilayer film. The distance from a lateral center of the ridge stripe to a lateral center of the recess, the stepped portion, or the protruding portion changes continuously or in stages from the front end facet toward the rear end facet. Bandgap energy of the active layer changes continuously or in stages from the front end facet toward the rear end facet.

Description

technical field [0001] The technology described in this specification relates to an incoherent semiconductor light emitting element with high luminous efficiency. Background technique [0002] Superluminescent diodes (hereinafter referred to as "SLD") are attracting attention as incoherent light sources required in optical measurement fields such as fiber optic gyroscopes and medical OCT (optical coherent tomography). The SLD is a semiconductor light emitting element using an optical waveguide similarly to a semiconductor laser (hereinafter referred to as "LD"). In the SLD, natural luminescence generated due to the recombination of injected carriers is amplified by high gain due to stimulated emission while traveling toward the light-emitting end face, and is emitted from the light-emitting end face. The difference between SLD and LD is that it suppresses the formation of an optical resonator due to end face reflection, and does not cause laser oscillation in FP (Fabry-Pero...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/32H01L33/14
CPCH01S5/34333H01S5/0207H01S5/125H01S5/2201H01L33/0045H01S5/3201B82Y20/00H01S5/1085H01S5/164
Inventor 折田贤儿
Owner PANASONIC CORP