A processing method of suspended thermal sensitive thin film resistor
A heat-sensitive film and processing method technology, applied in the direction of resistors with positive temperature coefficients, etc., can solve the problems of affecting performance, easy bending and fracture, etc., and achieve the effects of improving stability, improving crystal structure, and facilitating mass production
Active Publication Date: 2015-10-28
NORTHWESTERN POLYTECHNICAL UNIV
View PDF4 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
The disadvantages of this thermal sensor are: 1. The linear suspended thermal wire is easy to bend and break, which affects performance
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
example
[0028] This example proposes a Si0 based MEMS technology 2 The method for processing the suspended platinum thermistor thin film resistance for the insulation layer, the specific steps include the following:
[0029] Step 1: Clean the ordinary silicon wafer 1, the thickness of the ordinary silicon wafer 1 is 100um, remove the surface native oxide layer and organic pollution, and then dry, such as figure 1 (a);
[0030] Step 2: Using ordinary silicon wafer 1 as the substrate, grow SiO with a thickness of 1um on the polished surface of the silicon wafer by chemical vapor deposition 2 Film 2, used for thermal isolation of Pt film 3 and ordinary silicon chip 1, such as figure 1 (b);
[0031] The chemical vapor deposition method includes: a plasma chemical vapor deposition method and a low-pressure chemical vapor deposition method, and the plasma chemical vapor deposition method is used in this embodiment.
[0032] Step 3: on SiO2 film 2 surface sputtering thickness is the Pt f...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention discloses a method for processing a suspended thermosensitive film resistor, which belongs to the micro-electro-mechanical system technical field. According to the invention, a common silicon chip is taken as a substrate, a bottom layer of a SiO2 film or a Si3N4 film is grown, a thermosensitive element film and a metal electrical connection film are sputtered, by etching on a specific position, shape and depth on a positive surface and a reverse surface, the suspended thermosensitive film resistor which takes the SiO2 film or the Si3N4 film as a thermal insulation layer can be obtained. The method for processing the suspended thermosensitive film resistor has the following beneficial effects that 1, relative to a linear thermosensitive wire the invention employs a folding beam type thermistor can enhance the sensitivity of the thermosensitive wire; 2, compared with all-suspended thermosensitive wire, a compartment suspended thermosensitive wire can enhance the stability and bendability resistance of the thermosensitive wire; 3, compared to a thermistor thermal insulation layer which is made by polyimide, the SiO2 film or the Si3N4 film is taken as the thermal insulation layer so that can be heated to more than 800 DEG C during heat treatment, thereby a crystallization structure of nickel can be effectively improved; and 4, the suspended platinum thermistor can be processed based on a standard MEMS technology, so that large batch production is easy to realize.
Description
technical field [0001] The invention relates to a method in the technical field of micro-electromechanical systems, in particular to a method for processing a suspended thermal-sensitive thin film resistor. Background technique [0002] Thermistors manufactured by MEMS can be widely used in the manufacture of sensitive probes for temperature sensors, flow rate sensors, shear stress sensors, and gas sensors. Thermistor thin film resistors are made of SiO 2 Membrane or Si 3 N 4 The membrane is on the heat insulation layer. Compared with the polyimide heat insulation layer, it has the characteristics of high heat treatment temperature, and can be applied to various measurement tasks such as flow field temperature, flow velocity, and shear stress. Especially in the dynamic measurement of the gas flow field, the reaction rate and resistance of the thermal sensor must be considered. At this stage, the thermal sensor has the characteristics of slow response speed and poor resist...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01C7/02
Inventor 常洪龙杨勇谢中建郝永存谢建兵袁广民
Owner NORTHWESTERN POLYTECHNICAL UNIV