Laser annealing method, device and microlens array
A technology of microlens array and laser annealing, which can be used in the manufacture of electrical components, electrical solid-state devices, semiconductor/solid-state devices, etc., and can solve problems such as poor processing efficiency
Inactive Publication Date: 2015-08-26
V TECH CO LTD
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Problems solved by technology
Therefore, the region other than the region where the thin film transistor (hereinafter referred to as TFT) should be formed is also annealed, so there is a problem of poor processing efficiency
Method used
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[0028] Hereinafter, preferred embodiments of the present invention will be specifically described with reference to the drawings. figure 1 It is a figure which shows the laser irradiation apparatus which used the microlens 5. figure 1 The shown laser irradiation device is used in the manufacturing process of a semiconductor device such as a thin film transistor with an inverted stagger structure, for example, to irradiate a region where a channel region is to be formed and perform annealing by irradiating laser light to form the channel region. A device for polycrystallizing a predetermined area to form a polysilicon film. The laser annealing device using the microlens 5 shapes the laser light emitted from the light source 1 into a parallel beam through the lens group 2 , and irradiates the irradiated object 6 through the microlens array composed of many microlenses 5 . The laser source 1 is, for example, an excimer laser that emits laser light with a wavelength of 308 nm or ...
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Disclosed are a laser annealing method, device, and microlens array that are able to configure a microlens array at a large pitch that differs from the pitch of regions at which the formation of a transistor is planned in an amorphous silicon film, and are able, at a smaller pitch than the arraying pitch of the microlens array, to form minute polysilicon film regions resulting from laser annealing of the amorphous silicon film. Of the microlenses, comprising a first group (11), a second group (12), and a third group (13), three rows are arrayed at the same pitch (P) within each group, and the microlenses are spaced by P+1 / 3 P between each group. In a first step, a first instance of laser light is radiated from the three rows of microlenses that are of the first group, and in a second step, a second instance of laser light is radiated from 2x3 rows of microlenses (5) at the point in time when the substrate (20) has been moved a distance of 3P, and in the same way thereafter, laser annealed regions are formed at a pitch of P / 3.
Description
technical field [0001] The present invention relates to a laser annealing method and device for annealing an amorphous silicon film by laser irradiation to form a low-temperature polysilicon film in thin-film transistor liquid crystal panels and the like, and to a microlens array used therein, and in particular to a microlens array capable of using the microlens array , a laser annealing method and device for performing annealing only corresponding to a region where a thin film transistor is formed. Background technique [0002] In a liquid crystal panel, an amorphous silicon film is formed on a glass substrate, and laser light having a linear beam shape is applied to the amorphous silicon film in a direction perpendicular to the longitudinal direction of the beam from one end of the substrate. Scanning is performed to form a low-temperature polysilicon film. By scanning the linear laser, the amorphous silicon film is heated by the laser and temporarily melted, and then the...
Claims
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IPC IPC(8): H01L21/20H01L21/268
CPCH01L27/1285H01L21/02532H01L21/02691H01L21/268H01L21/02678H01L21/02068
Inventor 水村通伸渡边由雄畑中诚
Owner V TECH CO LTD