Bidirectional symmetric pump-down system for sapphire single crystal furnace

Abstract

The invention relates to a bidirectional symmetric pump-down system for a sapphire single crystal furnace, which comprises a vacuum pump unit and a vacuumizing pipeline arranged on the single crystal furnace, wherein the vacuumizing pipeline comprises symmetrical left pump-down pipeline and right pump-down pipeline. The bidirectional symmetric pump-down system is of a specific structure that a cavity body is provided with two communicated and symmetrical pump-down ports; the two communicated and symmetrical pump-down ports are respectively in sealed connection with the left pump-down pipeline and the right pump-down pipeline; spiral wound water-cooled tubes are respectively welded on the outer walls of the left and right pump-down pipelines; a spring-type safety pressure relief device is arranged on one pump-down pipeline; a vacuum angle valve is arranged on the other pump-down pipeline; a cross pipeline is connected and fixed on the outer wall of the cavity body by a pipeline bracket; the left pump-down pipeline and the right pump-down pipeline are crossed at the cross pipeline and are in sealed connection with the cross pipeline by flanges; the vacuum pump unit is in sealed connection with the cross pipeline by a flange; and a low vacuum gauge and a high vacuum gauge are arranged on the cross pipeline.

Description

technical field [0001] The invention relates to an evacuation system, in particular to a two-way symmetrical evacuation system used in a sapphire single crystal furnace, which can meet the high vacuum conditions required for sapphire single crystal growth and satisfy the thermal field balance and symmetry conditions. Background technique [0002] The sapphire single crystal furnace is an important crystal growth equipment in the LED industry. Since the sapphire single crystal must be grown slowly at high temperature (about 2050°C) and high vacuum (10E-5Pa), a large amount of The volatile matter in the furnace affects the vacuum degree in the furnace and needs to be discharged through the evacuation system in time to avoid affecting the purity of the sapphire crystal. Therefore, the performance and reliability of the evacuation system are directly related to the success or failure of the sapphire single crystal growth. At present, sapphire single crystal furnaces generally us...

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Problems solved by technology

[0004] The purpose of the present invention is to: aim at the single asymmetrical evacuation system of the existing sapphire crystal growth furnace, the single evacuation opening of the cavity is too large, which destroys the symmetry of the temperature field, resulting in low yield of sapphire single crystal growth, sticking to the pot, and poor quality. To solve a series of problems, provide a new type of reliable two-way symmetrical evacuation system for sapphire single crystal furnace

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