Semiconductor structure and method of forming same, pmos transistor and method of forming same
A technology of semiconductors and transistors, applied in the field of semiconductors, can solve problems such as dislocation of silicon-germanium bulk layers, and achieve the effect of avoiding excessive differences in germanium content
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no. 1 example
[0047] refer to figure 1 and figure 2 Step S101 is executed to provide a semiconductor substrate 100 , a gate structure 120 is formed on the surface of the semiconductor substrate 100 , and grooves 110 are formed in the semiconductor substrate 100 on both sides of the gate structure 120 .
[0048] The gate structure 120 includes a gate dielectric layer (not marked) and a gate electrode layer (not marked) on the gate dielectric layer. The substrate 100 may be silicon, silicon germanium, silicon-on-insulator, etc., and the substrate 100 includes an isolation structure (not shown), the isolation structure may be a silicon oxide shallow groove isolation structure, and the isolation structure is used for Devices formed on the surface of the semiconductor substrate 100 are isolated. The material of the gate dielectric layer can be high-k dielectric material such as silicon oxide or hafnium oxide, and the material of the gate can be doped polysilicon, metal, metal silicide or othe...
no. 2 example
[0073] Please refer to Figure 7 The difference between the method for forming a PMOS transistor provided by the second embodiment of the present invention and the method for forming a PMOS transistor provided by the first embodiment is that:
[0074]It also includes forming a second graded silicon germanium layer 370 between the surface of the silicon germanium bulk layer 150 and the covering layer 360 . The content of germanium in the second graded silicon germanium layer 370 decreases along the direction from the silicon germanium bulk layer 150 to the covering layer 360 . Specifically, as long as the germanium in the second silicon-germanium graded layer 370 shows a decreasing trend as a whole, it can be linearly alkaline or wave-like, for example, the germanium in the second silicon-germanium graded layer Along the direction from the silicon germanium bulk layer to the silicon germanium capping layer, the content of decreases linearly, parabolicly, or curvilinearly.
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PUM
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