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SiSiC high-temperature ceramic furnace bottom plate for annular furnace and preparation method for bottom plate

A technology for high-temperature ceramics and furnace bottom plates, which is applied in the field of high-temperature ceramics, and can solve the problems of cracking and damage to the furnace bottom plate, service life of the furnace bottom plate, bending and deformation of the furnace bottom plate, and poor high-temperature resistance, and achieve low cost, good creep resistance, and thermal shock resistance. good sex effect

Inactive Publication Date: 2013-01-30
YICHANG KEBO OLIVINE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to overcome the defects of the metal furnace bottom plate of the existing ring furnace, and the purpose is to provide a preparation technology for the SiSiC high-temperature ceramic furnace bottom plate of the ring furnace with simple process and good performance, and the high-temperature ceramic furnace bottom plate prepared by this technology High temperature resistance, good creep resistance, high temperature strength, good thermal shock resistance, can effectively solve the problem of poor high temperature resistance of the metal furnace bottom plate, high temperature creep rate of the material caused by bending deformation of the furnace bottom plate, thermal expansion rate of the material The large size will cause cracking and damage to the bottom plate of the furnace and the problem of low service life

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Weigh 30 kg of large SiC particles, 20 kg of small SiC particles, 45 kg of fine SiC powder and 10 kg of carbon powder, add 4 kg of phenolic resin, and mix and grind them in a mixer to make a mud. The mud is put into the mold, and a conventional ramming molding method is used to form a wet blank of the furnace floor.

[0033] The wet billet was put into a drying furnace and kept at 110°C for 32 hours, and then kept in a sintering furnace at 1700°C and a vacuum degree of less than 30 Pa for 36 hours to obtain a bottom plate blank.

[0034] The blank is subjected to mechanical processing to obtain SiSiC high-temperature ceramic furnace floor.

Embodiment 2

[0036] Weigh 50 kg of large SiC particles, 15 kg of small SiC particles, 30 kg of fine SiC powder and 5 kg of carbon powder, add 6 kg of phenolic resin, and mix and grind them in a mixer to make a mud. The mud is put into the mold, and a conventional ramming molding method is used to form a wet blank of the furnace floor.

[0037] The wet billet was put into a drying furnace and kept at 110°C for 72 hours, and then kept in a sintering furnace at 1850°C and a vacuum degree of less than 80 Pa for 20 hours to obtain a bottom plate blank.

[0038] The blank is subjected to mechanical processing to obtain SiSiC high-temperature ceramic furnace floor.

Embodiment 3

[0040] Weigh 50 kg of large SiC particles, 18 kg of small SiC particles, 25 kg of fine SiC powder and 1 kg of carbon powder, add 9 kg of silica sol, and mix and grind in a mixer to make a mud. The mud is put into the mold, and a conventional ramming molding method is used to form a wet blank of the furnace floor.

[0041] The wet billet was put into a drying furnace and held at 110°C for 72 hours, and then held in a sintering furnace at 1850°C and a vacuum degree of less than 20 Pa for 6 hours to obtain a bottom plate blank.

[0042] The blank is subjected to mechanical processing to obtain SiSiC high-temperature ceramic furnace floor.

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PUM

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Abstract

The invention relates to a method for preparing a SiSiC high-temperature ceramic furnace bottom plate for an annular furnace. The method comprises the following steps of: taking 30 to 50 parts of SiC large particles, 15 to 35 parts of SiC small particles, 30 to 45 parts of SiC fine powder and 1 to 10 parts of carbon powder, adding 4 to 9 parts of binder, mixing, milling, drying at the temperature of 110 DEG C in a drying furnace, preserving the heat for 32 to 72 hours, preserving the heat for 6 to 36 hours in a sintering furnace at the temperature of between 1,700 and 1,850 DEG C under the vacuum degree of less than 100Pa, machining, and thus obtaining the SiSiC high-temperature ceramic furnace bottom plate for the annular furnace. The method is simple and low in cost, and the bottom plate has the characteristics of high-temperature resistance, high creep resistance, high high-temperature strength and high thermal shock resistance.

Description

【Technical Field】 [0001] The invention belongs to the technical field of high-temperature ceramics, and specifically relates to a SiSiC high-temperature ceramic furnace bottom plate for an annular furnace and a preparation method thereof. 【Background technique】 [0002] In the ring furnace of metallurgical and mechanical manufacturing plants, the furnace bottom plate is a key structural component for carrying steel coils and steel parts for thermal processing production. The existing annular furnace floor is generally made of high-temperature alloy materials. For a long time under high temperature and load conditions of about 950℃ or even more than 1000℃, the high temperature resistance performance of the high temperature alloy material used to make the metal furnace floor, especially the high temperature strength and creep resistance performance, is difficult to meet the requirements of actual working conditions. The high temperature creep rate of the material results in the gr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/66
Inventor 祝洪喜汪盛明张小东骆中汉邓承继彭玮珂程明
Owner YICHANG KEBO OLIVINE