A kind of preparation method of tungsten oxide-based resistive memory
A tungsten oxide, resistance-type technology, applied in the direction of electrical components, etc., can solve the problems of increasing photolithography steps, increasing process complexity and cost, etc.
Inactive Publication Date: 2016-03-30
FUDAN UNIV
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[0004] Currently reported based on WO x The "metal / medium / metal" resistive memory structure (that is, tungsten oxide-based resistive memory, the tungsten oxide-based storage medium is WO x ) uses a tungsten plug as the lower electrode, and the upper interconnection line as the upper electrode of the memory, WO x The self-alignment of the storage medium is formed on the top of the tungsten plug, but in practical applications, the WO x , so the logic part needs to be masked while preparing the memory cell to ensure that the tungsten plug is not oxidized, which results in the memory array part and the logic part needing to be fabricated separately, adding additional photolithography steps to prepare the upper electrode, thus increasing the process complexity and cost
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[0035] The invention is described more fully hereinafter in reference to the examples illustrated in the illustrations, providing preferred embodiments but should not be considered limited to the embodiments set forth herein. In the drawings, the thicknesses of layers and regions are exaggerated for clarity, but as schematic diagrams, they should not be considered as strictly reflecting the proportional relationship of geometric dimensions.
[0036] The drawings referenced herein are schematic illustrations of idealized embodiments of the invention, and the illustrated embodiments of the invention should not be considered limited to the particular shapes of the regions shown in the drawings, but include resulting shapes, such as manufacturing-induced deviation. For example, the curves obtained by dry etching usually have curved or rounded characteristics, but in the illustrations of the embodiments of the present invention, they are all represented by rectangles, and the repre...
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Abstract
The invention belongs to the technical field of resistive memorizers and relates to a method for producing a tungsten oxide based resistive memorizer compatible with a standard logic process. The method includes the step of constructing a picture to etch an upper electrode material layer so as to form an upper electrode on a tungsten oxide based resistive memory medium layer on a tungsten plug of a memory array part, wherein etching process conditions for the upper electrode material layer are set to enable the a tungsten oxide based resistive memory medium on the tungsten plug of a logic part to be removed. The tungsten oxide based resistive memory medium layer can be formed without adding extra mask, one etching process is omitted, technological process is simplified, and producing cost is saved.
Description
technical field [0001] The invention belongs to the technical field of resistance memory, and relates to a preparation method of a tungsten oxide-based resistance memory, in particular to a preparation method of a tungsten oxide-based resistance memory compatible with a standard logic process. Background technique [0002] Memory occupies an important position in the semiconductor market. Due to the continuous popularization of portable electronic devices, the share of non-volatile memory in the entire memory market is also increasing. Recently, non-volatile resistive memory (Resistance Random Access Memory, RRAM) has attracted high attention because of its high density, low cost, and the characteristics of breaking through the development limit of technology nodes. Resistive memory uses the characteristics of the resistance of the storage medium to be reversibly switched between high resistance and low resistance under the action of electrical signals to store signals. The...
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IPC IPC(8): H01L45/00
Inventor 林殷茵刘易
Owner FUDAN UNIV