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Preparation technology for single-phase Mg2Si semiconductor film

A preparation process and semiconductor technology, applied in metal material coating process, ion implantation plating, coating and other directions, can solve problems such as high cost, harsh experimental conditions, and difficult industrialization and promotion.

Inactive Publication Date: 2015-03-11
GUIZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The technical problem to be solved by the present invention: provide a single-phase Mg 2 The preparation process of Si semiconductor thin film is to overcome the disadvantages of harsh experimental conditions, high cost, and difficulty in industrialization of the existing technology, and the electron beam evaporation deposition process, there are impurities such as MgO oxides, which ultimately affect the Mg 2 Si quality and other issues

Method used

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  • Preparation technology for single-phase Mg2Si semiconductor film
  • Preparation technology for single-phase Mg2Si semiconductor film
  • Preparation technology for single-phase Mg2Si semiconductor film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] (1) Cut the Si wafer for the test to the required size; first, use absolute ethanol and acetone to vibrate ultrasonically for 20 minutes, the purpose is to remove the organic matter on the surface of the silicon wafer, and then use deionized water to ultrasonically clean it 5 times, 10 times each time. minutes; finally, place the cleaned samples in a drying oven and dry them at 70°C;

[0022] (2) Due to the small area of ​​the Si sheet used for the test, it is fixed on the sample holder above the evaporation chamber with a shrapnel. High-purity Mg particles are placed directly in the evaporation crucible;

[0023] (3) Vacuum the evaporation chamber, when the vacuum degree is less than or equal to 2.0×10 -4 Pa, and keep it for a period of time;

[0024] (4) When the vacuum degree is less than or equal to 2.0×10 -4 At Pa, the heating current is gradually increased to 80 A, and the evaporation starts; the power of resistive thermal evaporation during evaporation is 18...

Embodiment 2

[0030](1) Cut the silicon wafer for testing to the desired size; first, clean it with absolute ethanol and acetone for 20 min with ultrasonic vibration to remove the organic matter on the surface of the silicon wafer, and then use deionized water for 5 times of ultrasonic vibration cleaning, each 10 minutes each time. Finally, the cleaned samples were baked in a drying oven at 80 °C until the surface was completely dry;

[0031] (2) Due to the small area of ​​the Si sheet used for the test, it is fixed on the sample holder above the evaporation chamber with a shrapnel. Mg particles are placed directly in the evaporation crucible;

[0032] (3) Vacuum the evaporation chamber, when the vacuum degree is less than or equal to 2.0×10 -4 Pa, and keep it for a period of time;

[0033] (4) When the vacuum degree is less than or equal to 2.0×10 -4 Pa, start evaporation; the evaporation current is gradually increased to 80 A, and the evaporation officially starts; the power of resi...

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Abstract

The invention discloses a preparation technology for a single-phase Mg2Si semiconductor film. The preparation technology comprises processes as follows: 1, evaporating to deposit an Mg film on an Si substrate, wherein an Si sheet is cleaned and dried and then fixed on a sample frame above a resistance thermal evaporation chamber, and Mg particles are positioned in an evaporation crucible for vapor deposition; and 2, annealing: transferring an Si sheet carried out vapor deposition into a high vacuum annealing furnace for annealing under low-vacuum atmosphere, so as to obtain the single-phase Mg2Si semiconductor film. By adopting the preparation technology, the shortcomings that experimental conditions are severe, the cost is higher, the industrial popularization is hard to carry out and the like are overcome; and the problems that the quality of Mg2Si is finally influenced as impurities such as MgO oxide are generated when an electron beam evaporation and depositing technology is adopted and annealing is carried out under an argon atmosphere in the annealing process of an annealing furnace are solved.

Description

technical field [0001] The present invention relates to a single phase Mg 2 Preparation process of Si semiconductor thin film. Background technique [0002] Mg 2 As a metal silicide environment-friendly semiconductor material with good development prospects, Si has the following characteristics: the raw material resources of elements Mg and Si are abundant, the earth's crust has large reserves, and the price is low; the elements are non-toxic and pollution-free, Mg 2 Si is resistant to corrosion and oxidation. Environment friendly semiconductor Mg 2 The reason why Si material has broad application prospects is also because it has a series of excellent characteristics, such as its preparation method is compatible with the existing Si-based microelectronics process, which reduces the cost pressure brought about by the upgrading of production equipment; 1.2-1.8 μm The infrared band is suitable for modern communication devices; it has a good ohmic contact with n-type Si, and...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/30C23C14/16C23C14/58
Inventor 谢泉肖清泉余宏陈茜张晋敏
Owner GUIZHOU UNIV