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LED (light-emitting diode) chip and preparation method thereof

An LED chip and indirect technology, applied in the field of optoelectronics, can solve the problem of reducing the external quantum efficiency of LED chips, and achieve the effect of improving the external quantum efficiency

Active Publication Date: 2015-06-17
宁波安芯美半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide an LED chip and its preparation method, which is used to solve the problem in the prior art that the window layer absorbs light caused by the growth defect of the window layer and causes the external quantum efficiency of the LED chip to decrease.

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  • LED (light-emitting diode) chip and preparation method thereof
  • LED (light-emitting diode) chip and preparation method thereof
  • LED (light-emitting diode) chip and preparation method thereof

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Embodiment 1

[0051] Such as Figure 1 to Figure 4 Shown, the present invention provides a kind of preparation method of LED chip, and described preparation method comprises the following steps at least:

[0052] First perform step 1), provide a semiconductor substrate 1, and use metal chemical organic vapor deposition (MOCVD) to epitaxially grow an N-type epitaxial layer 33, an active layer 32, and a P-type epitaxial layer on the surface of the semiconductor substrate in sequence. layer 31 to form the light emitting epitaxial structure 3 . Wherein, the semiconductor substrate 1 is GaAs or Ge; the active layer 32 is a multi-quantum well structure; the light-emitting epitaxial structure is a III-V compound semiconductor material, at least including quaternary AlGaInP.

[0053] It should be noted that, in order to reduce the absorption of light by the semiconductor substrate 1 of the LED chip, a Bragg reflection layer can be inserted between the semiconductor substrate 1 and the light-emittin...

Embodiment 2

[0067] Such as Figure 4As shown, the present invention also provides an LED chip obtained according to the LED chip preparation method, and the LED chip at least includes: a semiconductor substrate 1, a light-emitting epitaxial structure 3, a window buffer layer 4, a window layer 5, a transparent The conductive layer 6 , the first electrode 71 and the second electrode 72 . In the second embodiment, the LED chip further includes a Bragg reflection layer 2 located between the semiconductor substrate 1 and the light-emitting epitaxial structure 3 .

[0068] The semiconductor substrate 1 is GaAs or Ge, specifically, in the second embodiment, the semiconductor substrate 1 is lightly doped N-type GaAs, and its doping concentration is less than 1e18cm -2 .

[0069] It should be noted that, in order to reduce the absorption of light by the semiconductor substrate 1 of the LED chip, a Bragg reflection layer 2 can be inserted between the semiconductor substrate 1 and the light-emitti...

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Abstract

The invention provides an LED (light-emitting diode) chip and a preparation method of the LED chip. The method comprises the steps of: providing a semiconductor substrate, arranging a Bragg reflecting layer, a luminous epitaxial structure, a window buffer layer and a window layer in sequence at the bottom surface of the semiconductor substrate in an epitaxial growth manner; fabricating a transparent conductive layer and a first electrode at the upper surface of the window layer in sequence; and fabricating a second electrode on the back side of the semiconductor substrate. Compared with the existing LED chip which uses a single window layer on the luminous epitaxial structure, the window buffer layer of which the material is the same as that of the window layer but the thickness is smaller than that of the window layer is added; and the epitaxial growth temperature and the epitaxial growth rate of the window buffer layer are smaller than those of the window layer. The quality defect of the window buffer layer is smaller than that of the window layer due to the epitaxial growth under a low-temperature and low-speed environment, so that the quality defect of the subsequently growing window layer is reduced, the purpose of reducing light absorption of the window layer when improving homogeneous diffusion of the current by the window layer is achieved, and further, the external quantum efficiency of the LED chip is improved.

Description

technical field [0001] The invention belongs to the technical field of optoelectronics, and relates to an LED chip and a preparation method thereof. Background technique [0002] LED (Light Emitting Diode) chip, also known as LED light-emitting chip, is the core component of LED lights and a solid-state semiconductor device that can directly convert electrical energy into light energy. The light-emitting structure on the substrate in the LED chip is mainly composed of two parts, one is a P-type semiconductor, holes are the majority carriers, the other is an N-type semiconductor, electrons are the majority carriers, and the two semiconductors are connected. , a P-N junction is formed. When the current acts on the chip through the wire, the electrons will be pushed to the P region, and in the P-N junction region (such as the quantum well region), the electrons will recombine with the holes, and then energy will be emitted in the form of photons. This is the LED chip. The pri...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/12H01L33/00
Inventor 林志远蔡正文刘勇志沈秉非
Owner 宁波安芯美半导体有限公司