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Preparation method of germanium-silicon film monitoring sheet, and monitoring method through adopting sheet

A monitoring film and film technology, which is applied in the preparation of test samples, instruments, electrical components, etc., can solve the problems of unsatisfactory actual results and achieve the effects of low manufacturing cost, good sensitivity, and simple preparation methods

Active Publication Date: 2013-03-06
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

When applied to actual production, calibration and spectrum analysis are required for each germanium-silicon thin film, so the actual effect is very unsatisfactory

Method used

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  • Preparation method of germanium-silicon film monitoring sheet, and monitoring method through adopting sheet
  • Preparation method of germanium-silicon film monitoring sheet, and monitoring method through adopting sheet
  • Preparation method of germanium-silicon film monitoring sheet, and monitoring method through adopting sheet

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Embodiment Construction

[0029] In the photolithography process, since the two-dimensional pattern is very sensitive to the reflectivity of the substrate, as shown in Figure 6, for a rectangular hole with a given length, width and space period, when the reflectivity of the substrate changes, its one-dimensional direction Both the width and length change are approximately linear changes, but the aspect ratio of the graph is a quadratic curve change. Moreover, the trends of different lengths, widths and spatial periods are different. Therefore, for the measurement pattern of any two parameters of the three parameters of width, length, and space period, such as width and space period, under the same exposure energy, the size of one of the parameters of the measurement pattern, such as the width, varies with the other variable parameter The change trend of is closely related to the reflectivity of the substrate, and any small change in reflectivity will cause its trend to change.

[0030] Because in the ...

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Abstract

The invention discloses a preparation method of a germanium-silicon film monitoring sheet. The preparation method comprises the following steps: forming a group of dimension-changed measure figures in a lithography mask; 2, depositing a germanium-silicon film on a substrate; and 3, coating a photoresist on the substrate, exposing the lithography mask obtained in step 1, and developing to form the measure figures on the germanium-silicon film and obtain the germanium-silicon film monitoring sheet. The preparation method has the advantages of simplicity and low making cost. The invention discloses a method for monitoring the germanium-silicon film through adopting the germanium-silicon film.

Description

technical field [0001] The invention relates to a preparation method of a germanium-silicon thin film monitor sheet. The invention also relates to a monitoring method using the sheet. Background technique [0002] Silicon is one of the most important materials for mass-produced semiconductor devices at present. It is easy to prepare raw materials, rich in nature, and has basic characteristics such as semiconductor characteristics, so it is used to prepare semiconductor devices. [0003] However, for high-frequency and high-speed applications, the bandgap of silicon is wide, and the mobility of carriers is restricted. Therefore, people usually introduce some other elements to form silicon alloys to reduce the bandgap and increase the mobility of carriers. Germanium is one of the most important materials. Germanium has a crystal structure similar to silicon, and the alloying process with silicon is easy to implement and has high matching. At the same time, the introduction o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N1/28G01N33/00H01L23/544H01L21/66
Inventor 王雷
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP