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Aluminum gallium strontium tantalum silicate piezoelectric crystal and preparation method thereof

A technology of piezoelectric crystals and aluminum silicate, applied in the field of piezoelectric crystals, can solve the problems of poor crystallinity, high price, difficult large-sized crystals, etc., and achieve the effect of good crystallization performance and excellent piezoelectric performance

Inactive Publication Date: 2013-04-03
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI +1
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, it was found in the crystal growth that the above-mentioned Al 3+ Instead of Ga 3+ The resulting new crystals have poor crystallinity, and it is difficult to obtain large-sized single crystals without macroscopic defects.
Therefore, for STGS and STAS crystals, due to the high purity Ga 2 o 3 The price is expensive, Al 2 o 3 The price of STGS crystals is low, so the cost of STGS crystals is too high, while the cost of STAS crystals is relatively low, but the crystallization properties of STAS crystals are poor, and it is difficult to obtain large-size crystals (greater than 2 inches) without macroscopic defects, which affects the popularization and use of crystals

Method used

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  • Aluminum gallium strontium tantalum silicate piezoelectric crystal and preparation method thereof

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preparation example Construction

[0025] The preparation method of the aluminum gallium strontium tantalum piezoelectric crystal of the present invention also includes: according to the stoichiometric ratio of ingredients, after mixing, briquetting, sintering, and the process A of obtaining the compound raw material by causing a solid phase reaction; using an iridium or platinum crucible, Heating and melting the compound raw material and keeping it warm to stabilize the state of the melt, rotating the seed crystal and starting the process B of pulling the growing crystal; after the growth is completed, the crystal is separated from the melt, and the crystal is lowered to room temperature to obtain the silicon Process C of aluminum gallium strontium tantalum piezoelectric crystal.

[0026] More specifically, as an example, the present invention may include the following steps.

[0027] (1) High-purity, such as SrCO with a purity of 99.99% 3 、 Ta 2 o 5 、Al 2 o 3 , Ga 2 o 3 and SiO 2 Ingredients are formu...

Embodiment 1

[0033] When x=1.50, Sr was grown by pulling method 3 TaAl 1.5 Ga 1.5 Si 2 o 14 crystal;

[0034] SrCO with a purity of 99.99% 3 、 Ta 2 o 5 、Al 2 o 3 , Ga 2 o 3 and SiO 2 Raw materials are formulated according to chemical formula:

[0035] 6SrCO 3 +Ta 2 o 5 +1.5Al 2 o 3 +1.5Ga 2 o 3 +4SiO 2 =2Sr 3 TaAl 1.5 Ga 1.5 Si 2 o 14 ;

[0036] After the raw materials are fully mixed, they are compacted and sintered at 1200 ° C for 20 hours to obtain Sr 3 TaAl 1.5 Ga 1.5 Si 2 o 14 polycrystalline material;

[0037] Using a medium frequency induction heating pull furnace, the sintered material is placed in an iridium crucible, with N 2 As a protective gas, heat up to 1500°C for 2 hours to melt the sintered material, keep the temperature for 4 hours to stabilize the melt, and cool down to the next seeding temperature of 1445°C. During the growth process, the rotation speed is 10rpm, and the pulling speed is 1mm / h. After the stages of planting, shouldering, a...

Embodiment 2

[0042] When x=1.00, Sr was grown by pulling method 3 TaAl 2 Ga 1 Si 2 o 14 crystal;

[0043] Raw material SrCO with a purity of 99.99% 3 、 Ta 2 o 5 、Al 2 o 3 , Ga 2 o 3 and SiO 2 Ingredients by chemical formula:

[0044] 6SrCO 3 +Ta 2 o 5 +2Al 2 o 3 + Ga 2 o 3 +4SiO 2 =2Sr 3 TaAl 2 Ga 1 Si 2 o 14 ;

[0045] The raw materials are fully mixed and compacted, and sintered at 1300 ° C for 20 hours to obtain Sr 3 TaAl 2 Ga 1 Si 2 o 14 polycrystalline material.

[0046] Using a medium frequency induction heating pull furnace, the sintered material is placed in an iridium crucible, with N 2 As a protective gas, heat up to 1530°C for 2 hours and 20 minutes to melt the sintering material, keep the temperature for 4 hours to stabilize the melt, and the seeding temperature is 1435°C. During the growth process, the rotation speed was 15rpm, and the pulling speed was 0.8mm / h. After the stages of planting, shouldering, and equal diameter, the temperature was ...

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Abstract

The invention relates to an aluminum gallium strontium tantalum silicate piezoelectric crystal and a preparation method thereof. The chemical formula of the aluminum gallium strontium tantalum silicate piezoelectric crystal is Sr3TaAl(3-x)GaxSi2O14, wherein x is 0.05-2.50. Compared with an LGS piezoelectric crystal, the production cost of the STAGS piezoelectric crystal is obviously lowered under the condition of not affecting the piezoelectric property too much; compared with an STGS piezoelectric crystal, the piezoelectric property of the STAGS piezoelectric crystal is improved, and the production cost is further lowered; and compared with an STAS piezoelectric crystal having poor crystallization property, the STAGS piezoelectric crystal has the advantage of superior crystallization property.

Description

technical field [0001] The invention relates to an aluminum gallium strontium tantalum piezoelectric crystal and a preparation method thereof, belonging to the field of piezoelectric crystals. Background technique [0002] Piezoelectric devices include filters for frequency selection, frequency-controlled resonators, and high-sensitivity sensors for temperature, pressure, gas, flow, and acceleration, etc., and have been widely used in communications, navigation, automatic control, measurement detection, sensing technology and other fields. [0003] Piezoelectric crystals are an important class of materials used to make piezoelectric devices. Currently, the widely used piezoelectric crystals mainly include α-quartz and lithium niobate crystals. Quartz crystal has the advantages of zero frequency temperature coefficient, zero energy flow angle, and high Q-value cutting, and is widely used as a high-stable narrow-band filter and resonator. However, due to the phase transition ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/34C30B11/00C30B13/00
Inventor 涂一帆郑燕青涂小牛孔海宽杨建华施尔畏
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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