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Problems solved by technology
[0032] In this sense, Patent Document 10 is a solution for preventing adsorption, occlusion, and solid solution of hydrogen or moisture during grinding. After that, the occlusion and release of hydrogen are repeated, and it is used for a long time, so it is difficult to think that It is a technology that can be applied to sputtering targets with high replacement frequency, and of course it does not disclose or imply the present invention
Method used
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Embodiment 1）
[0102] The tantalum raw material with a purity of 99.997% is subjected to electron beam smelting and cast into an ingot or billet with a thickness of 200mm and a diameter of 200mmφ. Then, after forging and drawing the ingot or billet at room temperature, it was subjected to recrystallization annealing at a temperature of 1500 K to obtain a material with a thickness of 100 mm and a diameter of 100 mmφ.
[0103] Then, it was subjected to cold forging, upsetting and recrystallization annealing at 1173K, and then cold rolled again. The annealing process at 1173K (900°C) was repeated twice for finishing to obtain a target with a thickness of 10mm and a diameter of 320mmφ.
[0104] Then, the target material prepared as described above was subjected to finishing, the surface roughness was adjusted, and the target was dehydrogenated under the following conditions.
[0105] The surface roughness of the target: 0.2μm
[0106] The heating condition of the target: vacuum atmosphere, temperature 9...
Embodiment 2）
[0109] The target material prepared under the same conditions as in Example 1 described above was subjected to finish processing, the surface roughness was adjusted, and the target was dehydrogenated under the following conditions.
[0110] The surface roughness of the target: 0.2μm
[0111] Heating conditions of the target: vacuum atmosphere, temperature 700℃, 2 hours
[0112] The sputtering target after dehydrogenation by heating is set in a sputtering device (vacuum chamber) within 1 hour. As a result, the amount of hydrogen in Example 2 is 100 μL / cm 2 . In addition, the vacuum degree before sputtering is 1×10 -7 Pa is a good result.
Embodiment 3）
[0114] The target material prepared under the same conditions as in Example 1 described above was subjected to finish processing, the surface roughness was adjusted, and the target was dehydrogenated under the following conditions.
[0115] The surface roughness of the target: 0.2μm
[0116] Target heating conditions: argon atmosphere, temperature 700℃, 2 hours
[0117] The sputtering target after dehydrogenation by heating is set in a sputtering device (vacuum chamber) within 2 hours. As a result, the amount of hydrogen in Example 3 was 300 μL / cm 2 . In addition, the vacuum degree before sputtering is 2×10 -7 Pa is a good result.
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Abstract
Disclosed is a sputtering target and / or a coil to be disposed around a plasma generation area in order to confine the plasma, characterized in that the surface of the sputtering target and / or coil which is to be eroded has a hydrogen content of 500 [mu]L / cm2 or less. The inventors addressed the problem of reducing the content of hydrogen in the surface of a target and / or coil, and thought that a cause of the hydrogen occlusion was a step for producing the target and / or coil, in particular, heating conditions for the surface of the target and / or coil. By making the heating conditions proper, hydrogen occlusion in the target surface can be reduced and the degree of vacuum during sputtering is heightened. Thus, a sputtering target and / or coil which has a homogeneous fine structure, makes a plasma stable, and gives a film having excellent evenness (uniformity) is provided. Also provided is a process for producing the sputtering target and the coil.
Description
Technical field [0001] The present invention relates to a sputtering target and / or coil that can increase the degree of vacuum during sputtering, have a uniform and fine structure, stable plasma, and excellent film uniformity, and a method for manufacturing them. Background technique [0002] In recent years, in the electronics field, corrosion-resistant materials or decoration fields, catalyst fields, cutting / abrasive materials, or the production of wear-resistant materials, sputtering to form a film of metal or ceramic materials has been used. [0003] The sputtering method itself is a well-known method in the above-mentioned field. However, recently, particularly in the electronic field, a sputtering target suitable for forming a film or a circuit of a complicated shape or forming a barrier film or the like is required. [0004] Generally speaking, the target is manufactured by the following method: hot forging, annealing (heat treatment) of ingots or billets obtained by melting a...
Claims
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