Method of forming metal return circuit

Abstract

The invention provides a method of forming a metal return circuit. The method of forming the metal return circuit comprises that a semiconductor substrate is provided, an insulating layer is formed on the semiconductor substrate and a metal layer is formed on the insulating layer; an anti-reflection coating is formed on the metal layer; oxidation treatment is conducted on the anti-reflection coating, a photoresist (PR) layer is formed on the surface of the anti-reflection coat, and the metal layer is patterned; and the metal layer is etched. According to the method of forming the metal return circuit, not only defects of the metal return circuit can be radically prevented from generating, but also etching metal is not limited by conditions inside a metal etching cavity, technology cycles can be shortened, and therefore outputs are improved. The technology process is simple without adding extra equipment, and is completely compatible when being compared with a prior semiconductor manufacturing technology, and side effects can not be produced.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a method for forming a metal circuit in an aluminum metal interconnection process. Background technique [0002] In a traditional aluminum metal interconnection process, an aluminum metal layer is formed on the surface of a semiconductor device, and then the aluminum metal layer is patterned to etch out required metal circuits. After the etching process, the interface of the metal grains in the metal circuit will trap the residue of the photoresist (PR) used in the patterning process, which will induce the metal circuit Defects such as metal residues are generated. For the manufacturing process of the 0.13-micron memory, the metal loop defect greatly increases the risk of bridging adjacent metal wires, which ultimately leads to failure of the device function. [0003] In order to suppress the generation of metal circuit defects, the prior art usually achieves the above p...

AI Technical Summary

Problems solved by technology

However, this method requires a long cycle time, resulting in a decrease in batch yield, and does not address the root cause of the metal loop defect

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