Fluorescence concentrating solar energy cell based on three cesium iodide tin and preparing method thereof
A technology of cesium tin triiodide and solar cells, which is applied in the field of solar energy, can solve the problems of high photoelectric conversion efficiency and low broadband absorption photoelectric conversion efficiency, and achieve the effect of improving photoelectric conversion efficiency
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[0023] Example 1
[0024] Solar cell 1 is a monocrystalline silicon solar cell, and the composition of cesium tin triiodide layer 2 is cesium tin triiodide (CsSnI 3 ), the thickness of the cesium tin triiodide layer 2 is 200 nanometers, the component of the spectroscopic film 3 is silicon dioxide, and the thickness of the spectroscopic film 3 is 10 nanometers.
[0025] The preparation method is as follows: prepare the solar cell 1; plate the cesium tin triiodide layer 2 with a thickness of 200 nanometers on the solar cell 1 by the spin coating method, so that the cesium tin triiodide layer 2 is gradually over the solar cell 1 Condensation forming; the spectroscopic film 3 with a thickness of 10 nanometers is plated on the cesium tin triiodide layer 2 by a vacuum sputtering method, so that the spectroscopic film 3 is gradually condensed and formed on the cesium tin triiodide layer 2.
Example Embodiment
[0026] Example 2
[0027] The solar cell 1 is a polycrystalline silicon solar cell, and the cesium tin triiodide layer 2 is composed of fluorine-doped cesium tin triiodide (CsSnI 2 F) The thickness of the cesium triiodide tin layer 2 is 300 nanometers, the component of the spectroscopic film 3 is silicon nitride, and the thickness of the spectroscopic film 3 is 10 nanometers.
[0028] The preparation method is as follows: prepare the solar cell 1; coat the cesium tin triiodide layer 2 with a thickness of 300 nanometers on the solar cell 1 by the drip coating method, so that the cesium tin triiodide layer 2 gradually over the solar cell 1 Condensation forming; the spectroscopic film 3 with a thickness of 10 nanometers is plated on the cesium tin triiodide layer 2 by a vacuum sputtering method, so that the spectroscopic film 3 is gradually condensed and formed on the cesium tin triiodide layer 2.
Example Embodiment
[0029] Example 3
[0030] The solar cell 1 is a copper indium gallium selenium solar cell, and the cesium tin triiodide layer 2 is composed of fluorine-doped cesium tin triiodide (CsSnIF 2 ), the thickness of the cesium tin triiodide layer 2 is 500 nanometers, the composition of the spectroscopic film 3 is magnesium fluoride, and the thickness of the spectroscopic film 3 is 10 nanometers.
[0031] The preparation method is as follows: prepare the solar cell 1; plate the cesium tin triiodide layer 2 with a thickness of 500 nanometers on the solar cell 1 by chemical hydrothermal method, so that the cesium tin triiodide layer 2 is above the solar cell 1 Gradually condense and shape; the spectroscopic film 3 with a thickness of 10 nanometers is plated on the cesium tin triiodide layer 2 by a vacuum sputtering method, and the spectroscopic film 3 is gradually condensed and formed on the cesium tin triiodide layer 2.
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