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Method for preparing oxide surface on surface enhanced raman scattering (SERS) substrate through atomic layer deposition technology

A technology of atomic layer deposition and oxide, applied in the field of surface spectroscopy, to achieve the effect of improving surface inhomogeneity

Inactive Publication Date: 2013-05-15
上海帕壳实业有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But the technical difficulty is how to obtain the thinnest, densest oxide layer

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment example 1

[0031] Put the prepared active silver substrate of metal island film into the ALD studio, after vacuuming and purging with nitrogen three times, save the low vacuum state filled with nitrogen, and raise the temperature to 300 °C. According to the operation requirements of ALD, titanium tetrachloride (which is the precursor of titanium oxide) steam pulses, nitrogen purge pulses, water vapor as oxygen source pulses, and nitrogen purge pulses are alternately fed. This is an ALD deposition cycle. The working temperature of the titanium tetrachloride source and the water source are both at room temperature, the pulse length of the titanium source and the water source is both 0.1 second, and the pulse length of the purge and cleaning is 6 seconds. The number of ALD deposition cycles was 50, and the thickness of alumina was about 3 nm. After cooling down, the SERS substrate was taken out.

Embodiment example 2

[0033] It is the same as Embodiment 1, but the SERS substrate is a silver substrate obtained by chemical deposition, and the target oxide layer is silicon oxide. The precursor used is tetraethoxy silicon, the oxygen source is water, the operating temperature of the ALD system is 350 ℃, after 30 times, a silicon oxide thin layer of 3 nm is formed.

Embodiment example 3

[0035] It is the same as Embodiment 1, but the SERS substrate is a gold substrate active with metal electrodes, and the target oxide layer is zirconia. The zirconium precursor used was zirconium n-butoxide, the oxygen source was ozone, and the ALD operating system was at 250 °C. After 10 deposition cycles, a thin layer of zirconia with a thickness of 1 nm was obtained.

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Abstract

The invention discloses a method for preparing a preparing oxide surface on a surface enhanced raman scattering (SERS) substrate through an atomic layer deposition technology. A layer of oxide thin film is formed on the SERS surface through a chemical absorption reaction on the surface by alternately filling precursor pulses and oxygen source pulses. The method, which prepares a layer of dense and stable oxide surface which is thinner than 5nm on the SERS substrate through the ALD technology, overcomes the shortcomings of uneven surface, instable performance and poor reproducibility of the original SERS substrate.

Description

technical field [0001] The invention relates to the technical field of surface spectroscopy, in particular to a method for preparing an oxide surface of a surface-enhanced Raman scattering substrate. Background technique [0002] Since Fleischmann first discovered the Surface Enhanced Raman scattering (SERS) phenomenon in the 1970s, after decades of development, SERS detection technology has been widely used in various fields such as physics, chemistry, biology, medicine, and materials. , and become an important tool for trace detection of substance molecules. The preparation of active substrates is the prerequisite for obtaining SERS signals. In order to use SERS as a routine and online analysis tool, the prepared SERS substrates should have the characteristics of strong enhancement ability, good uniformity, easy preparation and storage, and convenient use. At present, the commonly used SERS substrates mainly include metal electrode active substrates, metal island film act...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/40C23C16/44
Inventor 李丰潘革波葛海雄
Owner 上海帕壳实业有限公司