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Low temperature sintered microwave dielectric ceramic BiZn2VO6 and preparation method thereof

A microwave dielectric ceramic and low-temperature sintering technology is applied in the field of dielectric ceramic materials to achieve the effect of large application value and small temperature coefficient of resonance frequency

Active Publication Date: 2014-04-16
苏州弘吴科技中介服务有限公司
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  • Abstract
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Problems solved by technology

Considering that there is no literature on BiZn 2 VO 6 Research report on the sintering and microwave dielectric properties of ceramics, our BiZn 2 VO 6 The sintering characteristics and microwave dielectric properties were studied, and it was found that this type of ceramic has excellent comprehensive microwave dielectric properties and the sintering temperature is lower than 800 ° C, can be widely used in the manufacture of microwave devices such as various dielectric substrates, resonators and filters, and can meet the technical needs of low temperature co-firing technology and microwave multilayer devices

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  • Low temperature sintered microwave dielectric ceramic BiZn2VO6 and preparation method thereof

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Embodiment

[0019] Table 1 shows four specific examples of different sintering temperatures constituting the present invention and their microwave dielectric properties. The preparation method is as above, and the microwave dielectric performance is evaluated by the cylindrical dielectric resonator method.

[0020] The ceramics can be widely used in the manufacture of microwave devices such as various dielectric resonators and filters, and can meet the technical needs of mobile communication, satellite communication and other systems.

[0021] The present invention is by no means limited to above embodiment, has the element such as La, Eu, Y, Ce, Gd, Tb, Dy, Ho, Tm, Yb and Lu etc. with the similar structure and chemical property of Bi etc. also can make and the present invention Dielectric ceramics with similar crystal structure and properties.

[0022]

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Abstract

The invention discloses a low temperature sintered microwave dielectric ceramic BiZn2VO6 and a preparation method thereof. The chemical formula of the dielectric ceramic material is BiZn2VO6. The preparation method comprises the following steps of: (1) proportioning original powder of ZnO, Bi2O3 and V2O5 with the purity over 99.9% according to composition of BiZn2VO6; (2) mixing the raw material in step (1) by a wet ball mill for 12 hours by taking distilled water as a solvent, and drying and pre-sintering for 6 hours in atmosphere at 650 DEG C; and (3) adding an adhesive to the prepared powder obtained in step (2) and prilling, then pressing and forming, and finally, sintering for 4 hours in atmosphere at 710-750 DEG C, wherein the adhesive is a polyvinyl alcohol liquor with mass concentration of 5%, and accounts for 3% of the total weight of the powder. Ceramic prepared by the invention is well sintered at 710-750 DEG C, and the dielectric constant reaches 32-36, and the quality factor Qf value reaches 65000-108000GHz. The ceramic is less in temperature coefficient of resonance frequency.

Description

technical field [0001] The invention relates to a dielectric ceramic material, in particular to a dielectric resonator, a filter and other microwave components used at microwave frequencies, as well as the dielectric ceramic material of a ceramic capacitor or a temperature compensation capacitor and a preparation method thereof. Background technique [0002] Microwave dielectric ceramics refer to ceramics that are used as dielectric materials in circuits in the microwave frequency band (mainly UHF and SHF bands) and perform one or more functions. They are widely used as resonators, filters, and dielectric substrates in modern communications. Chips, dielectric waveguide circuits and other components are the key basic materials of modern communication technology. They have been used in portable mobile phones, car phones, cordless phones, TV satellite receivers, military radars, etc. It is playing an increasingly important role in the process of miniaturization and integration....

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/495C04B35/622
Inventor 方亮郭汝丽郑少英向飞
Owner 苏州弘吴科技中介服务有限公司