Copper doped tin oxide transparent conductive membrane and preparation method thereof

A technology of transparent conductive film and tin oxide, applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve problems such as poor controllability, achieve high surface roughness, reduce manufacturing costs, and increase absorption rate

Inactive Publication Date: 2013-06-05
SHANGHAI NAT ENG RES CENT FORNANOTECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The APCVD process requires a higher temperature of 500–600°C, which is a temperature that m

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Ordinary glass is used as the substrate, after ultrasonic cleaning in acetone and air gun drying, the film is to be deposited; when sputtering, argon is used as the sputtering gas, and the silicon oxide layer is deposited first, and the pressure is adjusted to 0.8Pa. The sputtering power of silicon is radio frequency 60W, and the sputtering time is 3min to obtain a silicon oxide film with a thickness of 9nm; then continue to sputter the titanium oxide film of the transition layer. At this time, the pressure is adjusted to 1Pa, and the sputtering power of the titanium oxide target is DC 50W, the sputtering time is 2min, and a titanium oxide transition layer with a thickness of 15.6nm is deposited; finally, a copper-doped tin oxide layer is prepared. During co-sputtering, adjust the distance between the substrate and the metal copper target to be 40 cm, and the distance between the substrate and the tin oxide target to be 20 cm. The pressure of argon is increased to 3Pa, ...

Embodiment 2

[0028] Using plexiglass (polymethyl methacrylate) as the substrate, after cleaning ultrasonically in acetone and drying with an air gun, the film is to be deposited. ; During sputtering, argon is used as the sputtering gas. First sputter the silicon oxide layer, adjust the pressure to 0.8Pa, the sputtering power of silicon oxide is 60W of radio frequency, the sputtering time is 2min, and the silicon oxide film with a thickness of 6nm is deposited; then continue to sputter the transition layer titanium oxide, at this time , the argon pressure was adjusted to 1Pa, the sputtering power of titanium oxide was DC 50W, and after the sputtering time was 1min, a titanium oxide transition layer with a thickness of 7.8nm was deposited; finally, a copper-doped tin oxide layer was prepared, and the substrate and the The distance between the metal copper target is 30cm, and the distance between the substrate and the tin oxide target is 20cm. During co-sputtering, the pressure of argon gas ...

Embodiment 3

[0030]The quartz glass is used as the substrate, after being ultrasonically cleaned in acetone and dried with an air gun, the thin film is to be deposited. During sputtering, argon is used as the sputtering gas. First sputter the silicon oxide layer, adjust the pressure to 0.8Pa, the sputtering power of silicon oxide during sputtering is 60W of radio frequency, the sputtering time is 4min, and the silicon oxide film with a thickness of 12nm is deposited; then continue to sputter the transition layer titanium oxide , at this time, the argon pressure was adjusted to 1Pa, the sputtering power of titanium oxide was DC 50W, and the sputtering time was 90s, and a titanium oxide transition layer with a thickness of 11.7nm was deposited; finally, a copper-doped tin oxide layer was prepared, and the adjusted base The distance between the sheet and the metal copper target is 35 cm, and the distance between the substrate and the tin oxide target remains unchanged. During co-sputtering, ...

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Abstract

The invention discloses a copper doped tin oxide transparent conductive membrane characterized in that the conductive membrane is composed of three layers of membranes which sequentially include a silicon oxide layer, a titanium oxide layer and a copper doped tin oxide layer, wherein the thickness of the silicon oxide layer is 6-9nm, the thickness of the titanium oxide layer is 7.8-16.5nm, the thickness of the copper doped tin oxide layer is 123.8-548.7nm, and the content of copper doped in a tin oxide layer is 0.8%-3.1%. The invention discloses a preparation method of the copper doped tin oxide transparent conductive membrane, and is characterized by including the following steps: choosing and cleaning a substrate material, depositing a diffusion barrier layer on the surface of the substrate by means of magnetron sputtering process, depositing a transitional layer on the surface of the diffusion barrier layer by means of the magnetron sputtering process, and depositing the copper doped tin oxide layer on the surface of the transitional layer by means of the magnetron sputtering process. The membrane has good conductivity and high transparency, and can be widely used in the technical field of solar batteries and photoelectricity.

Description

technical field [0001] The invention relates to a conductive film and a preparation method thereof, in particular to a copper-doped tin oxide film transparent conductive film and a preparation method thereof. technical background [0002] With the increasing depletion of resources, the utilization of solar energy has attracted much attention, especially in recent years, the research and development of photovoltaic devices has shown great potential for application in commercial and residential facilities. Transparent conductive oxide (TCO) thin films in typical thin-film photovoltaic devices are materials with low resistivity and high transmittance. Since the energy of sunlight in the visible range only accounts for 43% of the full wavelength range (300-2500nm) of light emission. The energy in the ultraviolet region (300-400nm) accounts for only 5%, while the energy in the near-infrared region (700-2500nm) accounts for 52% of the total energy. The common TCO materials inclu...

Claims

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Application Information

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IPC IPC(8): H01L31/0224H01L31/18C23C14/35
CPCY02P70/521Y02P70/50
Inventor 毛启明姜来新尹桂林何丹农
Owner SHANGHAI NAT ENG RES CENT FORNANOTECH
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