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Forming method and forming device of magnetic material layers

A technology of magnetic material and inert gas, which is applied in the application of magnetic film to substrate, coating process of metal material, manufacturing/processing of electromagnetic device, etc., can solve the problems of low reliability of magnetic memory and inability to further meet industrial needs , to achieve the effect of compact structure, saving process steps and high reliability

Active Publication Date: 2013-06-05
SEMICON MFG INT (SHANGHAI) CORP
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Problems solved by technology

[0006] However, with the further reduction of the process node, the reliability of the magnetic memory formed by the existing technology is low, and it cannot further meet the needs of the industry

Method used

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  • Forming method and forming device of magnetic material layers
  • Forming method and forming device of magnetic material layers

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Embodiment Construction

[0042] As mentioned in the background, with the further reduction of the process node, the memory formed by the prior art has low reliability and cannot further meet the industrial requirements. After research, the inventors found that the reliability of the magnetic memory is related to the structure of the magnetic tunnel junction, and the reliability of the magnetic tunnel junction with the planar structure is lower than that of the magnetic tunnel junction with the three-dimensional structure.

[0043] However, limited by materials and process conditions in the prior art, physical vapor deposition (PVD) can only be used to form magnetic tunnel junctions under ultra-high vacuum (UHV) conditions. However, due to physical vapor deposition (PVD) in The surface quality of the magnetic tunnel junction with a three-dimensional structure is poor. Most of the magnetic tunnel junctions formed in the prior art are planar structures. Please refer to figure 1 , The magnetic tunnel junc...

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Abstract

The invention provides a forming method of magnetic material layers. The forming method includes providing a substrate which comprises an opening used for forming the magnetic material layers, and covering the bottom and bottom electrode layers of part side wall of the opening; and utilizing a chemical gas phase sedimentation technique of reducing metal chloride to form the magnetic material layers which are covered on the surfaces of the electrode layers at the bottom of the substrate. The formed magnetic material layers are good in quality, a magnetic tunnel structure which is formed finally is good in performance, and stability of a magnetic storage is high. Correspondingly, the invention further provides a forming device of the magnetic material layers, conditions are provided for the forming method of the magnetic material layers, the structure is simple, and production efficiency is high.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method and device for forming a magnetic material layer. Background technique [0002] In recent years, due to the characteristics of short read and write time, non-volatility and low power consumption of magnetic memory (Magnetic Random Access Memory, MRAM), magnetic memory has become more and more popular as a storage device suitable for information processing equipment such as computers or communication equipment. much attention. [0003] The magnetic memory in the prior art stores information in a magnetic tunnel junction (Magnetic Tunnel Junction, MTJ) structure by applying a magnetic field, and reads information by measuring the current of the MTJ. Specifically, the MTJ is composed of two magnetic material layers and an insulating layer between the two magnetic material layers. [0004] The structure of the magnetic memory in the prior art includes: ...

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Application Information

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IPC IPC(8): H01L43/12H01F41/22C23C16/38C23C16/44
Inventor 三重野文健
Owner SEMICON MFG INT (SHANGHAI) CORP
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