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Method for preparing graphene

A graphene, the same technology, applied in the field of graphene preparation, can solve problems such as toxicity, non-compliance with large-scale industrial production of green chemistry, and achieve the effect of increasing the degree of controllability

Active Publication Date: 2015-06-10
INST OF CHEM CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, these carbon sources have some safety hazards such as flammability and toxicity during use, and do not meet the requirements of green chemistry and large-scale industrial production.

Method used

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  • Method for preparing graphene
  • Method for preparing graphene

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 2

[0045] Embodiment 2, carbon dioxide activated hydrogenation reaction growth circular graphene

[0046] According to the same method as in Example 1, only the carbon dioxide flow rate was increased to 20 sccm in step 3). By increasing the flow of carbon dioxide to change the concentration of carbon atoms, and then affect the morphology of the resulting graphene, image 3 Low and high magnification SEM images of the obtained circular graphene. And the resulting circular graphene prepared samples were characterized by transmission electron microscopy, as Figure 4 shown.

Embodiment 3

[0047] Example 3, carbon dioxide activated hydrogenation reaction growth hexagonal transition to circular graphene

[0048] According to the same method as in Example 1, only the flow rate of carbon dioxide introduced in step 3) is set at 5, 10, and 20 sccm respectively. By observing the evolution of the obtained graphene morphology, it was found that the morphology of the obtained graphene changed from hexagonal to circular, as shown by the atomic force microscope Figure 5 , and the Raman characterization of its circular graphene was done, as shown in Figure 6 shown.

Embodiment 4

[0049] Example 4, carbon dioxide activated hydrogenation reaction grows hexagonal and gradually transitions to circular graphene

[0050] According to the same method as in Example 1, only the flow rate of carbon dioxide introduced in step 3) is set at 1, 3, 5, 10, 15, 20, 30 sccm respectively, and the subtle evolution of the obtained graphene morphology is observed, and the obtained graphite The morphology of alkenes gradually transitions from hexagonal to circular, as shown in Figure 7 Shown are the scanning electron microscope images corresponding to 7 different graphenes obtained from 7 values ​​of carbon dioxide flow rate.

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Abstract

The invention discloses a method for preparing graphene, which is implemented in a way that: in a chemical vapor deposition process, a catalyst is utilized to activate the properties of carbon dioxide, and hydrogenation reaction is carried out to grow graphene on a copper substrate. The flow rate of the carbon dioxide is controlled to change the concentration of the carbon source, thereby achieving the effect of shape evolution. Compared with the traditional method, the method disclosed by the invention greatly enhances the controllable degree of the shape in the graphene preparation process, and prepares the hexagonal-to-round graphene in a controllable way.

Description

technical field [0001] The invention relates to a method for preparing graphene. Background technique [0002] Graphene material is the first two-dimensional crystal that exists stably. As the structural basis of zero-dimensional fullerene, one-dimensional carbon nanotube and three-dimensional graphite, it has unique mechanical, electrical, optical and thermal properties. It is used in nanoelectronics, Composite materials, transparent conductive films and energy storage have broad application prospects. Since the discovery of graphene by the team of Kostya Novosev and Andre Geim at the University of Manchester in 2004, many physical and chemical methods have been used to prepare high-quality graphene materials. These methods include mechanical exfoliation, silicon carbide epitaxial growth, graphite oxide reduction, ultrasonic-assisted dispersion, solvothermal, chemical vapor deposition, and organic synthesis (K.S.Novoselov, A.K.Geim, Science2004, 306, 666.; C .Berger, Z.So...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B31/04C01B32/19
Inventor 于贵罗庇荣徐洁刘洪涛耿德超武斌刘云圻
Owner INST OF CHEM CHINESE ACAD OF SCI