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Magnetoresistive sensing device

一种感测元件、感测装置的技术，应用在测量装置、纳米磁学、测量磁变量等方向，能够解决制程成本高、制程良率负面影响、制程步骤烦琐等问题，达到降低制作成本、提高制程良率、简化制程的效果

Active Publication Date: 2013-07-10
YUNENG ELECTRIC (CAYMAN) TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the above-mentioned method not only has a relatively complicated structure, but also has cumbersome and time-consuming process steps and high process costs, and additional consideration must be given to the process variation of chip assembly packaging, which has a negative impact on the process yield.

Method used

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  • Magnetoresistive sensing device
  • Magnetoresistive sensing device
  • Magnetoresistive sensing device

Examples

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Embodiment Construction

[0023] The object of the present invention is to provide a magnetoresistive sensing element through a semiconductor manufacturing process, which can be used to measure the change of the magnetic field in the Z-axis direction on the vertical reference plane. In order to make the above and other objects, features and advantages of the present invention more comprehensible, several anisotropic magnetoresistive (Anisotropic Magnetic Resistance, AMR) sensing elements are specifically cited below as examples, together with the accompanying drawings , whose details are as follows:

[0024] Please refer to figure 1 , figure 1 It is a three-dimensional perspective view illustrating the structure of the magnetoresistive sensing unit 100 according to an embodiment of the present invention.

[0025] Wherein, the anisotropic magnetoresistive sensing unit 100 includes a substrate 101 , a magnetic layer 102 , electrodes 103 and electrodes 104 . Wherein, the substrate 101 can be a silicon ...

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Abstract

A magnetoresistive sensing device includes a substrate, a magnetic layer, a first electrode and a second electrode. The substrate has a reference plane. The first electrode and a second electrode are disposed over the reference plane. The magnetic layer is disposed over the reference plane and has a magnetization direction. A non-straight angle is formed between the magnetic layer and the reference plane. The first electrode and the second electrode are electrically connected with each other through an electric pathway of the magnetic layer. An included angle is formed between the electric pathway and the magnetization direction.

Description

technical field [0001] The present invention relates to a magnetic sensing element, and in particular to a magnetoresistive sensing element constructed by a semiconductor process and a magnetoresistive sensing device having the magnetoresistive sensing element. Background technique [0002] Due to the emergence of consumer electronic products such as mobile phones and electronic compasses, coupled with traditional products such as motors and brakes, the demand for magnetoresistive magnetic sensing devices (referred to as magnetoresistive sensing devices) is increasing day by day. In particular, the three-dimensional magnetoresistive sensing device can sense the magnetic field changes of the orthogonal X, Y, and Z axes, and the electronic compass uses the three-dimensional magnetoresistive sensing device to accurately measure the earth's magnetic field. [0003] At present, the technology of manufacturing two-dimensional planar magnetoresistive sensors with semiconductor manu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R33/09
CPCG01R33/096B82Y25/00G01R33/09G01R33/093
Inventor 李乾铭刘富台汪大镛
Owner YUNENG ELECTRIC (CAYMAN) TECH CO LTD