Method for Reducing Metal Contamination on Wafer Backside When Depositing Amorphous Carbon Films
An amorphous carbon film, backside metal technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as metal contamination on the backside of wafers, and achieve the effect of reducing the degree of metal contamination and solving metal contamination
Active Publication Date: 2015-12-02
SHANGHAI HUALI MICROELECTRONICS CORP
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[0006] The main purpose of the present invention is to provide a method for reducing the metal pollution on the back of the wafer when depositing the amorphous carbon film (APF), aiming at solving the problem of metal pollution on the back of the wafer caused by depositing the amorphous carbon film (APF) issues to improve device performance
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[0020] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.
[0021] The core idea of the present invention is to provide a method for reducing the metal contamination on the back of the wafer when depositing the amorphous carbon film. The method uses NF to the cavity before depositing the amorphous carbon film. 3 cleaning, followed by O 2 The plasma removes the impurity particles in the chamber, and finally passes through the C 2 h 2 and Ar mixed gas for thin film deposition, so that a layer of amorphous carbon film is formed on the surface of the heating plate, and the Al formed during cleaning x f y Wrapped so that the wafer touches the amorphous car...
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Abstract
The invention discloses a method for reducing metal pollution on the back of a wafer during the sedimentation of an amorphous carbon film. The method comprises the steps of cleaning a cavity with NF3 prior to the sedimentation of the amorphous carbon film; introducing the plasma of O2 to remove impurity particles of the cavity; and finally introducing the mixed gas of C2H2 and Ar for the sedimentation of the film so as to form a layer of amorphous carbon film on the surface of a heating disc, and wrapping AlxFy formed in the course of cleaning. As the wafer touches the amorphous carbon film after entering the cavity, the degree of the metal pollution on the back of the wafer is lowered; and therefore, the problem of the metal pollution on the back of the wafer is solved.
Description
technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for reducing metal pollution on the back of a wafer when depositing an amorphous carbon film (APF). Background technique [0002] The main device in an integrated circuit, especially a VLSI, is a metal oxide semiconductor field effect transistor (MOS transistor for short). Its geometric size has been continuously reduced. With the continuous reduction of device size, aluminum interconnection has long been replaced by copper interconnection. The silicide used in the gate has developed from tungsten compound, titanium compound, cobalt compound to nickel compound, and even metal Grid (Al 2 o 3 , Ta 2 o 5 Wait). In the new generation of technologies, the emergence of ruthenium as a plating seed layer and manganese as a copper barrier layer has made the number of metals used in transistor manufacturing more abundant, thus enabling more options for dev...
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IPC IPC(8): H01L21/02
Inventor 朱亚丹周军
Owner SHANGHAI HUALI MICROELECTRONICS CORP