LED (light emitting diode) epitaxial wafer and manufacture method thereof
A technology for light-emitting diodes and epitaxial wafers, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of reduced electron-hole recombination efficiency, low effective mass, lattice constant and thermal expansion coefficient mismatch, etc., to improve the internal quantum efficiency, improving compounding efficiency and reducing defects
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[0027] Example one
[0028] The embodiment of the present invention provides an epitaxial wafer of a light emitting diode, see figure 1 , The epitaxial wafer includes:
[0029] Substrate 11, and buffer layer 12, undoped GaN layer 13, n-type layer 14, current spreading layer 15, multiple quantum well layer 16, and p-type layer 17, which are sequentially stacked on substrate 11, current spreading layer 15 Is a superlattice structure, which is formed by alternately stacking the first sublayer 151 and the second sublayer 152, the first sublayer 151 and the second sublayer 152 are made of Al x Ga 1-x Made of N, the content of Al in adjacent first sub-layer 151 and second sub-layer 152 is different, where 0
[0030] Specifically, since the current spreading layer 15 has a superlattice structure, several first sublayers 151 and several second sublayers 152 are alternately stacked, so that the current spreading layer 15 has several interfaces, and the interfaces can be very good. The ...
Example Embodiment
[0032] Example two
[0033] The embodiment of the present invention provides an epitaxial wafer of a light emitting diode, see figure 2 , The epitaxial wafer includes:
[0034] The substrate 21, and the buffer layer 22, the undoped GaN layer 23, the n-type layer 24, the current spreading layer 25, the multiple quantum well layer 26 and the p-type layer 27 laminated on the substrate 21 in sequence, the current spreading layer 25 It is a superlattice structure, which is formed by alternately stacking the first sublayer 251 and the second sublayer 252, and the first sublayer 251 and the second sublayer 252 are made of Al x Ga 1-x N is made, the content of Al in adjacent first sub-layer 251 and second sub-layer 252 is different, where 0
[0035] Specifically, since the current spreading layer 25 has a superlattice structure, several first sublayers 251 and several second sublayers 252 are alternately stacked, so that the current spreading 25 has several interfaces, which can be re...
Example Embodiment
[0046] Example three
[0047] The embodiment of the present invention provides an epitaxial wafer of a light emitting diode. The epitaxial wafer provided in this embodiment is substantially the same as the epitaxial wafer provided in the second embodiment. The only difference is that, in this embodiment, each first sublayer 251 The Al composition content of each second sublayer 252 is different, and the Al composition content of each second sublayer 252 is the same.
[0048] In a specific implementation of this embodiment, the content of Al in the first sublayer 251 may gradually increase, such as Figure 4 As shown, the second sub-layer 252 is Al 0.4 Ga 0.6 N layer, the first sub-layer 251 is Al x Ga 1-x N, where the component content of Al is the value of x (0.2+0.02*n), where n is the number of layers.
[0049] In another specific implementation of this embodiment, the content of Al in the first sublayer 251 may gradually decrease, such as Figure 5 As shown, the second sub-layer ...
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