LED (light emitting diode) epitaxial wafer and manufacture method thereof

A technology for light-emitting diodes and epitaxial wafers, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of reduced electron-hole recombination efficiency, low effective mass, lattice constant and thermal expansion coefficient mismatch, etc., to improve the internal quantum efficiency, improving compounding efficiency and reducing defects

Active Publication Date: 2013-08-07
HC SEMITEK ZHEJIANG CO LTD
View PDF7 Cites 14 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In the existing epitaxial wafer, the multi-quantum well layer is directly arranged on the n-type layer. Since the electrons in the n-type layer have lower effective mass and higher mobility than the holes in the p-type layer, the electric field driving Under the condition, electrons will migrate to the p-type layer at a very fast speed across the multi

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • LED (light emitting diode) epitaxial wafer and manufacture method thereof
  • LED (light emitting diode) epitaxial wafer and manufacture method thereof
  • LED (light emitting diode) epitaxial wafer and manufacture method thereof

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0027] Example one

[0028] The embodiment of the present invention provides an epitaxial wafer of a light emitting diode, see figure 1 , The epitaxial wafer includes:

[0029] Substrate 11, and buffer layer 12, undoped GaN layer 13, n-type layer 14, current spreading layer 15, multiple quantum well layer 16, and p-type layer 17, which are sequentially stacked on substrate 11, current spreading layer 15 Is a superlattice structure, which is formed by alternately stacking the first sublayer 151 and the second sublayer 152, the first sublayer 151 and the second sublayer 152 are made of Al x Ga 1-x Made of N, the content of Al in adjacent first sub-layer 151 and second sub-layer 152 is different, where 0

[0030] Specifically, since the current spreading layer 15 has a superlattice structure, several first sublayers 151 and several second sublayers 152 are alternately stacked, so that the current spreading layer 15 has several interfaces, and the interfaces can be very good. The ...

Example Embodiment

[0032] Example two

[0033] The embodiment of the present invention provides an epitaxial wafer of a light emitting diode, see figure 2 , The epitaxial wafer includes:

[0034] The substrate 21, and the buffer layer 22, the undoped GaN layer 23, the n-type layer 24, the current spreading layer 25, the multiple quantum well layer 26 and the p-type layer 27 laminated on the substrate 21 in sequence, the current spreading layer 25 It is a superlattice structure, which is formed by alternately stacking the first sublayer 251 and the second sublayer 252, and the first sublayer 251 and the second sublayer 252 are made of Al x Ga 1-x N is made, the content of Al in adjacent first sub-layer 251 and second sub-layer 252 is different, where 0

[0035] Specifically, since the current spreading layer 25 has a superlattice structure, several first sublayers 251 and several second sublayers 252 are alternately stacked, so that the current spreading 25 has several interfaces, which can be re...

Example Embodiment

[0046] Example three

[0047] The embodiment of the present invention provides an epitaxial wafer of a light emitting diode. The epitaxial wafer provided in this embodiment is substantially the same as the epitaxial wafer provided in the second embodiment. The only difference is that, in this embodiment, each first sublayer 251 The Al composition content of each second sublayer 252 is different, and the Al composition content of each second sublayer 252 is the same.

[0048] In a specific implementation of this embodiment, the content of Al in the first sublayer 251 may gradually increase, such as Figure 4 As shown, the second sub-layer 252 is Al 0.4 Ga 0.6 N layer, the first sub-layer 251 is Al x Ga 1-x N, where the component content of Al is the value of x (0.2+0.02*n), where n is the number of layers.

[0049] In another specific implementation of this embodiment, the content of Al in the first sublayer 251 may gradually decrease, such as Figure 5 As shown, the second sub-layer ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses an LED (light emitting diode) epitaxial wafer and a manufacture method thereof, belonging to the technical field of semi-conductors. The epitaxial wafer comprises a substrate, a buffer layer, an unmixed GaN layer, an n type layer, a multi-quantum well layer and a p type layer which are sequentially stacked on the substrate, the epitaxial wafer further comprises a current expansion layer arranged between the n type layer and the multi-quantum well layer, wherein the current expansion layer is of a superlattice structure, the superlattice structure is formed by alternate stacking of a first sub layer and a second sub layer, the first sub layer and the second sub layer are made from AlxGa1-xN, ingredient contents of Al in adjacent first and second sub layers are different, and x is more than zero and less than one. According to the technical scheme, a speed of electrons in the n type layer is lowered before entering into the multi-quantum well layer, the electrons and electron holes are enabled to be fully compounded and luminescent, the compounding efficiency is increased, the current expansion layer is of the superlattice structure, so that the stress between the substrate and the n type layer can be effectively released by the multi-layer structure, defects in the epitaxial wafer are reduced, and efficiency of inner quantum is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an epitaxial wafer of a light emitting diode and a manufacturing method thereof. Background technique [0002] The light-emitting diode chip is a semiconductor crystal, which is the core component of the light-emitting diode. A light emitting diode chip includes an epitaxial wafer and electrodes fabricated on the epitaxial wafer. [0003] Wherein, the epitaxial wafer includes a substrate and an epitaxial layer, and the epitaxial layer includes a buffer layer, an undoped GaN layer, an n-type layer, a multi-quantum well layer and a p-type layer sequentially stacked on the substrate. [0004] In the process of realizing the present invention, the inventor finds that there are at least the following problems in the prior art: [0005] In the existing epitaxial wafer, the multi-quantum well layer is directly arranged on the n-type layer. Since the electrons in the n-type laye...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L33/14H01L33/12H01L33/04H01L33/00
Inventor 万林魏世祯
Owner HC SEMITEK ZHEJIANG CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products