Plasma CVD apparatus
A plasma and raw material gas technology, applied in plasma, gaseous chemical plating, coating, etc., can solve the problems of poor film forming productivity and inability to increase film forming speed
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no. 1 approach
[0027] Hereinafter, a plasma CVD apparatus according to a first embodiment of the present invention will be described based on the drawings.
[0028] figure 1 The overall configuration of a plasma CVD apparatus 1A according to the first embodiment of the present invention is shown.
[0029] In the plasma CVD apparatus 1A of this embodiment, under reduced pressure, by applying an alternating current to the pair of deposition rollers 2 and 2 arranged to face each other with a predetermined space (facing space) 3 therebetween or accompanied by A pulse voltage whose polarity is reversed generates a glow discharge in the opposing space 3 sandwiched between the pair of deposition rollers 2 and 2 . Then, in the plasma CVD apparatus 1A, film formation by plasma CVD is performed on the base material W using the plasma of the source gas (film formation gas) ionized by the glow discharge. This plasma CVD apparatus 1A includes a pair of film forming rollers 2 , 2 , a vacuum chamber 4 , ...
no. 2 approach
[0066] Next, a plasma CVD apparatus according to a second embodiment will be described.
[0067] Such as Figure 5 As shown, in the plasma CVD apparatus 1B of the second embodiment, as in the first embodiment, the second magnetic field generating unit 15 is arranged inside the deposition roller 2 as a member other than the first magnetic field generating unit 8 , however, unlike the plasma CVD apparatus 1A of the first embodiment, a plurality (two in this embodiment) of second magnetic field generators 15 are arranged inside each film forming roller 2 at the center of the film forming roller 2 . in the circumferential direction.
[0068] That is, in the case of the deposition roller 2 on the left, the second magnetic field generating unit 15 of the second embodiment is arranged, for example, at a position between four o'clock and five o'clock and between five o'clock and seven o'clock on the clock face. The location of these two places. In addition, in the case of the depos...
no. 3 approach
[0071] Next, a plasma CVD apparatus according to a third embodiment will be described.
[0072] Such as Figure 6 and Figure 7 As shown, the plasma CVD apparatuses 1C and 1D of the third embodiment are the same as the plasma CVD apparatuses 1A and 1B of the first and second embodiments in that they include the first and second magnetic field generators 8 and 15, but , the difference is that these first and second magnetic field generating parts 8, 15 are integrally constructed. Specifically, the first and second magnetic field generators 8 and 15 composed of the center magnet 16 and the racetrack-shaped peripheral magnets 17 are arranged side by side along the circumferential direction of the deposition rollers 2A and 2B. At this time, a part of the surrounding magnets 17 of the adjacent magnetic field generators 8 and 15 is shared. Thus, two regions, the region where the first film-forming region 19 is formed and the region where the second film-forming region 20 is forme...
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Abstract
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