A kind of igbt device with emitter ballast resistor
A ballast resistor and emitter technology, applied in the field of power semiconductor devices, can solve the problems of weakened short-circuit capability and weakened saturation current, and achieve the effects of enhanced short-circuit capability, low resistivity, and stable chemical properties
Inactive Publication Date: 2015-09-09
UNIV OF ELECTRONICS SCI & TECH OF CHINA +1
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Problems solved by technology
[0005] In traditional EBR structure IGBT devices, the emitter ballast resistance consists of strip N + The emission region is formed, and the impurity concentration of the emission region is usually greater than 10 19 cm -3 , the corresponding mobility tends to show a positive temperature coefficient characteristic (corresponding to a negative temperature coefficient characteristic of the emitter ballast resistance), and the consequence is that the emitter ballast resistance shows a tendency to decrease with increasing temperature, thereby weakening its effective The effect of limiting the saturation current, the short-circuit capability will also continue to weaken as the temperature rises
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[0025] An IGBT device with an emitter ballast resistor, its layout structure is as follows Figure 4 As shown, the longitudinal section structure diagram of the corresponding A-A' unit and B-B' unit line in the layout unit is as follows Figure 5 , 6 shown, including P + Collector area 9, located at P + The metal collector electrode 10, N on the back side of the collector region 9 - Drift zone 7, located in N - Drift Zone 7 and P + The N-type buffer layer 8 between the collector regions 9; the N - The middle region of the top layer of the drift region 7 is the P-type base region 4, and the P-type base region 4 has N + Emitter 2, N + Transmitter 2 is located by N + The contact hole 3 at the center of the emitter region 2 is connected to the metal emitter 6; the IGBT device also includes a gate structure, the gate structure is composed of a polysilicon gate electrode 1 and a gate oxide layer in contact with each other, wherein the gate oxide layer and N - Drift region 7...
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The invention discloses an IGBT device with an EBR, and belongs to the technical field of power semiconductor devices. In an IGBT device with an ordinary EBR structure, the EBR is composed of strip-shaped N+ emitter region strips which are far away from an emitter contact zone, the resistance value of the EBR is usually a negative temperature coefficient, namely, the higher the temperature is, the smaller the resistance value becomes, and when the saturation current of the IGBT is enlarged, the short-circuit capacity of the device is obviously reduced under a high-temperature environment. Due to the fact that a metal layer (such as ferro-nickel alloy) with a positive temperature coefficient is led to the N+ emitter region strips, a metal-medium composite resistor with the positive temperature coefficient is formed by the metal layer and the strip-shaped N+ emitter region strips which are far away from the emitter contact zone, the effect of the positive temperature coefficient of the EBR is achieved, the temperature of a resistance device of the EBR rises along the rising of the working temperature, and finally the effect that the short-circuit capacity is prone to being stronger with the rising of the temperature is achieved.
Description
technical field [0001] The invention belongs to the technical field of power semiconductor devices, and relates to an insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT). Background technique [0002] Semiconductor power devices are the basic electronic components for energy control and conversion in power electronic systems. The continuous development of power electronics technology has opened up a wide range of application fields for semiconductor power devices. MOS-type semiconductor power devices marked by IGBT, VDMOS, and CoolMOS are the mainstream of devices in the field of power electronics today. Among them, the most representative semiconductor power device is IGBT. [0003] IGBT (Insulated Gate Bipolar Transistor, Insulated Gate Bipolar Transistor) is a voltage-controlled MOS / BJT composite device. Structurally, the structure of IGBT is very similar to that of VDMOS, except that the N of VDMOS + Substrate adjusted to P + substrate, but the...
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IPC IPC(8): H01L29/739H01L27/06
Inventor 李泽宏宋文龙单亚东顾鸿鸣邹有彪张金平任敏
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA