A Characterization Method for Multilayer Film Structure Based on Thin Film Marking Layer
A technology of film structure and marking layer, which is applied in the research field of precision optical components, can solve the problems of the overall characterization error of the multilayer film structure, the slow change of the film thickness, and the influence of the optical performance of the component structure accuracy.
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0034] By adopting the method of the invention, the film system structure of the multilayer film Laue lens is accurately characterized.
[0035] (1) The raw material of the Laue lens multilayer film structure is WSi 2 / Si, the minimum film thickness is 15nm, the film thickness ranges from 15 to 64nm, and the total thickness is 7.9μm. Choose SEM to test the film structure.
[0036] (2) Since the images of different film layers in the original structure have good contrast, the difference between light and shade is large; and the WSi in the raw material 2 The effect of interface roughness and stress on film growth is small; therefore, the choice of WSi 2 Prepare a thin film marker layer.
[0037] (3) According to the structure of the original film system, the magnification of the SEM test is selected to be ~80,000 times, and the field of view of each image is ~1 μm. The original film system structure is continuously divided into 9 sub-regions. 100nm. The middle position of t...
Embodiment 2
[0042] A method for characterization of a multilayer film structure based on a thin film marking layer, comprising the following steps:
[0043] (1) Select scanning electron microscope or transmission electron microscope to test according to the structure of the multilayer film. The multilayer film is composed of two or more materials alternately. More than half of the film thickness of the multilayer film is less than 5nm. More than half of the film thickness in the film is greater than 5nm and a scanning electron microscope is selected, and a scanning electron microscope is selected in this embodiment;
[0044] (2) According to the electron microscope image of the original multilayer film structure, the material of the thin film marking layer is selected. Since the image contrast of the scanning electron microscope test is affected by the atomic number, the image of the multilayer film is very dark (the material atomic number is low), For the thin film marking layer, choose ...
Embodiment 3
[0052] A method for characterization of a multilayer film structure based on a thin film marking layer, comprising the following steps:
[0053] (1) Select scanning electron microscope or transmission electron microscope to test according to the structure of the multilayer film. The multilayer film is composed of two or more materials alternately. More than half of the film thickness of the multilayer film is less than 5nm. More than half of the film thickness in the film is greater than 5nm and a scanning electron microscope is selected, and a transmission electron microscope is selected in this embodiment;
[0054] (2) According to the electron microscope image of the original multilayer film structure, select the material of the thin film marking layer. According to the contrast mechanism during the test, select the material with the opposite contrast or less influence on the performance of the multilayer film as the film mark The imaging contrast mechanism of the transmiss...
PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More