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Thin-film transistor element and method for manufacturing same, organic electroluminescent display element, and organic electroluminescent display device

A technology of thin-film transistors and components, which is applied in the field of organic EL display devices, can solve problems such as poor electrical connections, and achieve the effect of controlling layer thickness and high quality

Active Publication Date: 2013-10-23
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] However, in the TFT element related to the prior art, there is a problem that even the part where the organic semiconductor layer is not intended to be formed (in the Figure 12 In (a) is the inside of the opening 9016a) will form an organic semiconductor layer, which will cause poor electrical connection with other elements (such as light-emitting element parts)

Method used

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  • Thin-film transistor element and method for manufacturing same, organic electroluminescent display element, and organic electroluminescent display device
  • Thin-film transistor element and method for manufacturing same, organic electroluminescent display element, and organic electroluminescent display device
  • Thin-film transistor element and method for manufacturing same, organic electroluminescent display element, and organic electroluminescent display device

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Embodiment approach 1

[0127] 1. Overall structure of the organic EL display device 1

[0128] Below, use figure 1 The structure of the organic EL display device 1 according to Embodiment 1 of the present invention will be described.

[0129] Such as figure 1 As shown, the organic EL display device 1 is configured to include an organic EL display panel 10 and a drive control circuit unit 20 connected thereto.

[0130] The organic EL display panel 10 is a panel utilizing the electroluminescence phenomenon of organic materials, and is configured such that a plurality of organic EL elements are arranged in a matrix, for example. The drive control circuit unit 20 includes a control circuit 25 and four drive circuits 21 to 24 .

[0131] In addition, in the organic EL display device 1 according to this embodiment, the arrangement of the drive control circuit unit 20 with respect to the organic EL display panel 10 is not limited to this.

[0132] 2. Structure of the organic EL display panel 10

[01...

Embodiment approach 2

[0247] use Figure 9 (a) illustrates the structure of the TFT substrate according to Embodiment 2 of the present invention. Figure 9 (a) is the same as that in Embodiment 1 above image 3 The figure corresponding to (a) is the same as that of Embodiment 1 above about other structures, so illustration and description are abbreviate|omitted.

[0248] Such as Figure 9 As shown in (a), in the TFT substrate according to this embodiment, a source electrode 2014 a , a drain electrode 2014 c , and a lyophilic layer 2019 b are arranged at the bottom of an opening 2016 b defined by a partition wall 2016 . In addition, similarly to the first embodiment described above, the connection wiring 2015 is arranged at the bottom of the opening 2016 a.

[0249] Both the source electrode 2014 a and the drain electrode 2014 c at the bottom of the opening 2016 b have a T-shaped planar (plan view) shape, and their respective portions extending in the X-axis direction face each other. On the oth...

Embodiment approach 3

[0254] use Figure 9 (b) illustrates the structure of the TFT substrate according to Embodiment 3 of the present invention. Figure 9 (b) is also the same as in Embodiment 1 above image 3 The figure corresponding to (a) is the same as that of Embodiment 1 and 2 mentioned above about other structures, so illustration and description are abbreviate|omitted.

[0255] Such as Figure 9 As shown in (b), in the TFT substrate according to this embodiment, a source electrode 3014 a , a drain electrode 3014 c , and a lyophilic layer 3019 b are arranged also at the bottom of the opening 3016 b defined by the partition wall 3016 . In addition, similarly to Embodiments 1 and 2, the connection wiring 3015 is arranged at the bottom of the opening 3016 a.

[0256] Both the source electrode 3014a and the drain electrode 3014c at the bottom of the opening 3016b have a comb-like planar shape, and the comb teeth face each other. Furthermore, the center of the sum of the surface areas of the...

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Abstract

This thin-film transistor element is formed in a first opening constituted by a partition wall enclosure. A source electrode and a drain electrode are laminated above a gate electrode, and are arranged so as to be spaced apart from each other in a direction that intersects the direction of lamination. An insulating layer is disposed between the gate electrode and the source electrode, and the gate electrode and the drain electrode. A semiconductor layer is formed in a gap between the source electrode and the drain electrode, and on the source electrode and the drain electrode, at the bottom of the first opening, and is in close contact with the source electrode and the drain electrode. A lyophilic layer: is formed separately to the source electrode and drain electrode on the insulating layer at the bottom of the first opening; is more lyophilic than the insulating layer; and, in a plan view of the bottom of the first opening, the center position of the surface area of the lyophilic layer is further toward one side from the center position of the area at the bottom of the first opening.

Description

technical field [0001] The present invention relates to a thin film transistor element and its manufacturing method, an organic EL display element, and an organic EL display device. Background technique [0002] In liquid crystal display panels and organic EL display panels, thin film transistor (TFT (Thin Film Transistor)) elements for controlling light emission in units of sub-pixels are formed. In particular, the development of devices using organic semiconductor layers has been progressing. [0003] Such as Figure 12 As shown in (a), the TFT element related to the prior art, for example, is sequentially stacked on a substrate 9011 with gate electrodes 9012a, 9012b, an insulating layer 9013, source electrodes 9014a, 9014b, drain electrodes (not shown), and an organic semiconductor layer. 9017a, 9017b. The organic semiconductor layers 9017a and 9017b are formed by applying organic semiconductor ink on the insulating layer 9013 and drying it, and are formed so as to fill...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L29/786H01L51/50H05B33/08H05B33/10H05B44/00H10K99/00
CPCH01L51/50H01L51/0545H01L27/1292H01L51/0004H01L51/5253H01L51/0558H01L51/56H01L27/1214H01L27/1225H10K71/13H10K10/484H10K10/466H10K59/873H10K50/844H10K71/00
Inventor 奥本有子宫本明人受田高明
Owner PANASONIC CORP