Buffer layer structure of light emitting diode
A light-emitting diode and buffer layer technology, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of affecting luminous efficiency, reducing the release of thermal stress, and reducing the luminous efficiency of light-emitting diodes, so as to improve luminous efficiency and eliminate interface charges. Influencing and improving the effect of manufacturing yield
Inactive Publication Date: 2013-10-30
HIGH POWER OPTO
View PDF3 Cites 3 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0004] However, the structure of the known buffer layer 5 is formed by stacking multiple layers of insulating materials 5A and 5B. Therefore, interfacial effects are likely to occur between the layers of the insulating materials 5A and 5B, and piezoelectric field effects will be generated to generate interface charges. , which will affect the luminous efficiency and reduce the luminous efficiency of the light-emitting diode, and the insulating materials 5A and 5B are two different materials, so they will not match each other, thus reducing the effect of releasing thermal stress
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0018] The present invention will be described in further detail below in conjunction with the accompanying drawings.
[0019] Please refer to " image 3 ”, the present invention is a light emitting diode buffer layer structure, applied to a light emitting diode structure 100, the light emitting diode structure 100 includes stacking a P-type electrode 10, a permanent substrate 20, a bonding layer 30, A buffer layer 40 , a reflective layer 50 , a P-type semiconductor layer 60 , a light-emitting layer 70 , an N-type semiconductor layer 80 and an N-type electrode 90 .
[0020] Please also see " Figure 4 "and" Figure 5 " shows that the buffer layer 40 of the present invention is a composite material, and the composite material of the buffer layer 40 is composed of at least two material elements, and blends with each other at the material boundary. The buffer layer 40 may include a first material layer 41 and a second material layer 42 . In order to facilitate the description...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention relates to a buffer layer structure of a light emitting diode, and the buffer layer structure is applied to a light emitting diode structure. The light emitting diode structure includes a P-type electrode, a permanent substrate, a bonding layer, a buffer layer, a reflection layer, a P-type semiconductor layer, a light emitting layer, an N-type semiconductor layer and an N-type electrode which are sequentially stacked. The buffer layer in the invention is made of composite material which comprises at least two material elements with material boundaries blended with each other. Since the composite material in the buffer layer is not significantly separated by interfaces, interface effects and stress between materials can be eliminated, and therefore light emitting efficiency and manufacturing yield of the light emitting diode are improved.
Description
technical field [0001] The present invention relates to light-emitting diodes, in particular to light-emitting diodes with improved luminous efficiency and manufacturing yield. Background technique [0002] Please refer to " figure 1 ” shows a known vertical light-emitting diode, which includes an N-type semiconductor layer 1, a light-emitting layer 2, and a P-type semiconductor layer 3 in a sandwich structure, and the P-type semiconductor layer 3 is arranged in sequence A reflection layer 4 (Mirror layer), a buffer layer 5 (tension release layer), a bonding layer 6, a silicon substrate 7 and a P-type electrode 8, and the surface of the N-type semiconductor layer 1 can be roughened to increase light emission rate, and provide an N-type electrode 9, according to which after applying voltage to the N-type electrode 9 and the P-type electrode 8, the N-type semiconductor layer 1 can provide electrons, and the P-type semiconductor layer 3 provides Holes, the electrons and the h...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/12
Inventor 周理评颜伟昱陈复邦张智松
Owner HIGH POWER OPTO