Super junction transistor and method of forming same
A technology of super junction transistors and body regions, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of unstable performance of super junction MOS transistors and the need to further improve the breakdown voltage of super junction MOS transistors, etc. To achieve the effect of improving performance and increasing breakdown voltage
Active Publication Date: 2017-03-01
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology
[0008] However, the performance of the super junction MOS transistor formed by the prior art is unstable, and the breakdown voltage of the super junction MOS transistor needs to be further improved
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[0028] As mentioned in the background, the performance of the super junction MOS transistor formed in the prior art is unstable, and the breakdown voltage of the super junction MOS transistor needs to be further improved.
[0029] Please continue to refer Figure 1 to Figure 3 , when the super junction MOS transistor is turned off, the semiconductor layer 104 and the N-type region 103 form a depletion layer. Specifically, the P-type ions located in the semiconductor layer 104 diffuse into the N-type region 103 in a direction parallel to the surface of the semiconductor substrate 100; Diffusion into the semiconductor layer 104 in the direction of the bottom 100 surface; thereby make the P-type ions in the semiconductor layer 104 and the N-type ions in the N-type region 103 deplete each other, then the semiconductor layer 104 and the N-type region 103 All form depletion layers. Since it is difficult for the depletion layer to allow carriers to pass through, the breakdown voltag...
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The invention provides a super junction transistor and a forming method of the super junction transistor. The super junction transistor comprises a semiconductor substrate, a plurality of first grooves, first semiconductor layers, second grooves, second semiconductor layers, gate structures, body regions and source regions. Second doping ions are filled into the semiconductor substrate, the first grooves are located in the semiconductor substrate, the side walls of the first grooves are inclined relative to the surface of the semiconductor substrate, and the size of the tops of the first grooves is larger than the size of the bottoms of the first grooves. The first semiconductor layers are located in the first grooves, and first doping ions are filled into the first semiconductor layers. The second grooves are located in the semiconductor substrate between the adjacent first semiconductor layers, the second semiconductor layers are located in the second grooves, and second doping ions are filled into the second semiconductor layers. The gate structures are located on the surfaces of the second semiconductor layers, the body regions are located in the first semiconductor layers between the adjacent gate structures, and the source regions are located in the body regions on the two sides of the gate structures. Second doping ions are filed into the source regions, first doping ions are filled into the body regions, and part of the body regions coincide with the gate structures. The breakdown voltage of the super junction transistor is increased, and the performance of the super junction transistor is improved.
Description
technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a super junction transistor and a forming method thereof. Background technique [0002] The Super Junction structure is a structure composed of a series of alternately arranged P-type semiconductor layers and N-type semiconductor layers, and the Super Junction MOS transistor is a semiconductor power device based on the Super Junction structure. The super junction MOS transistor is developed on the basis of a vertical double-diffused MOS (VDMOS, Vertical Double-Diffused MOS) transistor. In addition to having the advantages of the vertical double-diffused MOS transistor, the super junction MOS transistors also have the characteristics of low on-resistance (Rdson) and high breakdown voltage (BV, Breakdown Voltage). [0003] Figure 1 to Figure 3 It is a schematic cross-sectional structure diagram of a process of forming a super junction MOS transistor. [0004]...
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IPC IPC(8): H01L29/36H01L29/78H01L21/336
Inventor 刘宪周
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP