Light-emitting semiconductor element, manufacturing method thereof, and light source module
A technology for light-emitting semiconductors and manufacturing methods, which is applied in the direction of semiconductor devices, electrical components, and electric solid-state devices, and can solve problems such as poor thermal conductivity of light-emitting semiconductor elements, increased production costs, and inability to effectively reduce the volume of light-emitting semiconductor elements.
Active Publication Date: 2016-05-18
XIAMEN SANAN OPTOELECTRONICS CO LTD
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Problems solved by technology
However, the thermal resistance of the insulator 808 itself is large, which makes the heat conduction effect of the light-emitting semiconductor element poor; secondly, the volume of the insulator 808 becomes the main reason that the volume of the light-emitting semiconductor element cannot be effectively reduced, and increases the production cost; moreover, the production The colloid used in the insulator 808 ages over time and causes reliability problems
Method used
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Embodiment Construction
[0060] Cooperate with reference Figure 2A to Figure 2J , is a schematic diagram of the production process of an embodiment of the method for producing a light-emitting semiconductor device proposed by the present invention, where the light-emitting semiconductor device can be, for example (but not limited to) a light-emitting diode.
[0061] Such as Figure 2A As shown, firstly, a first conductive layer 10 is provided. The first conductive layer 10 is roughly flat and made of a material with good electrical conductivity, such as metal. The metal material can be, for example, copper. In a preferred embodiment, the thickness t of the first conductive layer 10 is greater than 5 micrometers (micrometer, μm), so as to improve the heat dissipation effect of the light emitting semiconductor device.
[0062] Then a slot 100 is formed on the first conductive layer 10, such as Figure 2B As shown, the slot 100 can be formed on the first conductive layer 10 by stamping, etching or hal...
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The invention discloses a light-emitting semiconductor component, a light source module and a method for manufacturing the light-emitting semiconductor component. The light-emitting semiconductor component comprises at least two electric conduction units, at least one light-emitting semiconductor crystalline grain and a light permeating layer. A notch is formed between the two electric conduction units, the light-emitting semiconductor crystalline grain is connected to the electric conduction units in a bridging mode, the light permeating layer wraps the light-emitting semiconductor crystalline grain, the notch is filled with at least part of the light permeating layer, and the two electric conduction units are combined through the part of the light permeating layer. According to the light-emitting semiconductor component, a light guiding unit is matched with the light permeating layer to seal the light-emitting semiconductor crystalline grain, the area of the light-emitting semiconductor component can be effectively reduced, and the insulating effect of the light-emitting semiconductor component can be improved.
Description
technical field [0001] The invention relates to a light emitting semiconductor element, especially a light emitting diode element. Background technique [0002] Cooperate with reference figure 1 , is a cross-sectional view of a conventional light-emitting semiconductor element. [0003] The light-emitting semiconductor device includes a first wire frame 800 , a die carrying frame 802 , a second wire frame 804 , an LED die 806 , an insulator 808 , multiple wires 810 and a light-transmitting glue 814 . The insulator 808 is made of opaque adhesive material, such as polyphthalamide (PPA), etc., and is used to fix the first lead frame 800, the die carrying frame 802 and the second lead frame 804, and A roughly cup-shaped die-bonding area 812 is formed, and the die-carrying bracket 802 is exposed in the die-bonding area 812; wherein the insulator 808 is formed on the first lead frame 800, the die-carrying frame 802 and the second lead frame by injection molding 804 peripheral. ...
Claims
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IPC IPC(8): H01L33/58H01L33/00
CPCH01L2224/14H01L2224/16245H01L2224/48247H01L2224/73265
Inventor 林立凡薛清全廖文甲陈世鹏
Owner XIAMEN SANAN OPTOELECTRONICS CO LTD