Method for forming double patterning based on DARC mask structure
A double image and mask technology, applied in the field of microelectronics, can solve the problems of product performance and yield reduction, infrequent use, and large cost, so as to improve the difference of critical dimensions, improve maturity and stability, and improve the uniformity of critical dimensions degree of effect
Active Publication Date: 2013-12-11
SHANGHAI HUALI MICROELECTRONICS CORP
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[0008] Among them, when performing the above-mentioned first etching process, an advanced patterning film (APF for short) is generally used as a soft-mask (soft-mask), and when performing the second etching process, ODL is used. And SHB as a soft mask, so that the critical dimensions of the structure formed after the two etching processes are divided into two different levels, making it more difficult to control the critical dimension uniformity (CDU), if there is a defect in the critical dimension uniformity , can easily lead to a reduction in product performance and yield
[0009] In addition, ODL and SHB are new materials, and their process costs are relatively high, and they are not commonly used in the process of 40nm and above technology nodes; therefore, the above-mentioned new materials are introduced in the process of 28nm and below technology nodes Takes a lot of time and effort to evaluate and apply
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[0035] The specific embodiment of the present invention will be further described below in conjunction with accompanying drawing:
[0036] Figure 2-9 It is a schematic diagram of the process structure of an embodiment of the double pattern forming method based on the DARC mask structure of the present invention; as Figure 2-9 As shown, a double pattern forming method based on the DARC mask structure is preferably applied to the gate line tail cutting process of the 28 / 20 nanometer and below technology nodes on the 193nm immersion optical lithography platform, the above-mentioned Methods include:
[0037] First, if figure 2 As shown, on a silicon substrate (Silicon) 1, a gate oxide layer 2, a polysilicon layer (poly) 3, a silicon nitride layer (SiN) 4, an advanced pattern film layer (APF) 5 and a dielectric anti-reflection layer ( Dielectric Anti_Reflectivity Coating, referred to as DARC) 6, to form such as figure 2 The structure shown; wherein, the gate oxide layer 2, ...
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The invention relates to the technical field of microelectronics, in particular to a method for forming double patterning based on a DARC mask structure. Advanced patterning films are respectively adopted in two times of etching processes of a double patterning forming process to be used as the masks of the etching processes, patterns in a light resistor are transferred to grid polycrystalline silicon, and therefore the difference between the key sizes of the two times of etching processes is greatly improved to improve the uniformity of the key sizes, meanwhile, an APF replaces a traditional monox hard mask, a base layer structure ODL based on spin coating and a middle later structure SHB, process cost is saved, meanwhile, the technological processes with APFs as masks adopted by mature technological nodes of 40nm and more than 40nm are made to last to the technological nodes of 28 / 20nm and lower than 28 / 20nm, and therefore the maturity and the stability of the grid manufacturing processes of the technological nodes of 28 / 20nm and lower than 28 / 20nm are improved.
Description
technical field [0001] The invention relates to the technical field of microelectronics, in particular to a double pattern forming method based on a DARC mask structure. Background technique [0002] At present, at the technology node of 32nm and below, it is applied to the key-level lithography process. Since the resolution index required by it has exceeded the limit capability of the existing optical lithography platform, the industry has adopted a variety of technical solutions to solve the problem. This technical problem, and according to the ITRS roadmap, technical solutions such as Double Patterning Technology (DPT for short), extreme ultraviolet technology (EUV), and electronic direct writing (EBL) have been placed high expectations by the industry. [0003] Among them, double patterning technology (DPT) is to decompose a set of high-density circuit graphics into two or more sets of low-density circuit diagrams, and then make photolithography plates separately, and co...
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IPC IPC(8): H01L21/283H01L21/308H01L21/335
Inventor 黄君毛智彪崇二敏黄海张瑜
Owner SHANGHAI HUALI MICROELECTRONICS CORP