Cleaning method for epitaxial chemical vapor deposition (CVD) device

Abstract

The invention relates to a cleaning method for an epitaxial chemical vapor deposition (CVD) device. The method comprises the steps of 1) introducing clean gas into a reaction cavity of a silicon carbide (SiC) epitaxial CVD device; 2) controlling the pressure of a reaction chamber at 10-200mbar, increasing the temperature of the reaction chamber to 1500-1600 DEG C, and introducing the clean gas into the reaction chamber. Therefore, by adopting the cleaning method for the epitaxial CVD device, provided by the invention, residues in the CVD reaction cavity can be automatically and fast cleaned.

Description

technical field [0001] The invention relates to a cleaning method for epitaxial chemical vapor deposition equipment, in particular to a cleaning method for silicon carbide (SiC) epitaxial chemical vapor deposition (Chemical Vapor Deposition, CVD) equipment. Background technique [0002] Currently, the SiC epitaxial CVD process is the most common used for SiC homoepitaxial growth. [0003] But at the same time as the epitaxial growth, residual deposits can also form inside the reaction chamber and on the surface of the susceptor. At present, the commonly used reaction chamber cleaning process in the industry is usually manual cleaning. Stop the epitaxial CVD process, lower the temperature of the reaction chamber to room temperature, and raise the pressure to normal pressure; open the reaction chamber, remove the reaction chamber, and clean the interior of the reaction chamber with a brush. The residue on the base is brushed off and cleaned. [0004] However, the above metho...

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Problems solved by technology

[0005] 1) The above method must stop the epitaxial growth, carry out the temperature reduction and pressure increase process, and after cleaning, the temperature increase and pressure reduction process needs to be carried out, which takes a lot of time and energy

[0006] 2) The above-mentioned cleaning work is done manually, which increases the work intensity of the operator, and the cleaning degree is inconsistent each time, and there may be cases where the residues are not cleaned up, which will eventually affect the next epitaxial growth;

[0007] 3) The entire reaction chamber is composed of graphite and quartz tubes, which are expensive and fragile materials, and manual cleaning methods are likely to cause damage to the reaction chamber

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