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A kind of nano silicon silver paste and its preparation method and application

A technology of nano-silicon and nano-silicon powder, which is applied in the direction of nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve the problems of different etching rates, thin diffusion layer at the top of the tower, and pollute equipment. To achieve the effect of preventing penetration of the emitter and the method is simple and easy

Active Publication Date: 2017-01-25
苏州金瑞晨科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The etch rates at the top and bottom of the tower are different, resulting in a thin diffusion layer at the top of the tower and a thick diffusion layer at the bottom of the tower
The thickness of the p / n junction of the battery is uneven, resulting in a decrease in battery efficiency
Second, the reverse engraving method must add three process steps
[0012] The disadvantages of the phosphorous slurry method mainly come from step 3. This step of cleaning is intended to remove the pollution to the silicon wafer caused by the phosphorous slurry printing in step 2.
During cleaning, most of the phosphorous slurry is washed away, causing waste and polluting equipment

Method used

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  • A kind of nano silicon silver paste and its preparation method and application
  • A kind of nano silicon silver paste and its preparation method and application
  • A kind of nano silicon silver paste and its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0055] A kind of nano silicon silver paste, this paste comprises the following components and the raw material of content is made:

[0056]

[0057] The phosphorus content of the nano silicon powder is 8%; the average particle diameter of the silver powder is less than 2 μm; the organic solvent is selected from terpineol.

[0058] The components of the additive are 5 parts of polyoxyethylene polyoxypropylene polyoxyethylene block copolymer, 20 parts of phosphoric acid, and 15 parts of deionized water.

[0059] The manufacture method of above-mentioned nano silicon silver paste, comprises the following processing steps:

[0060] (1) Preparation of phosphorus-containing nano silicon powder

[0061] First, use plasma high-temperature gasification to make 10-100 micron-sized silicon powder to obtain nano-silicon particles with an average particle size of 50nm, use hydrogen to activate nano-silicon, spray and gasify a certain amount of mixed solvent, and collect nano-silicon po...

Embodiment 2

[0073] A kind of nano silicon silver paste, this paste comprises the following components and the raw material of content is made:

[0074]

[0075] The phosphorus content of the nano silicon powder is 20%; the average particle size of the silver powder is less than 3 μm; the organic solvent is selected from sandalwood.

[0076] The additive is composed of 10 parts of polyoxyethylene polyoxypropylene polyoxyethylene block copolymer, 40 parts of phosphoric acid and 20 parts of deionized water.

[0077] The manufacture method of above-mentioned nano silicon silver paste, comprises the following processing steps:

[0078] (1) Preparation of phosphorus-containing nano silicon powder

[0079] First, use plasma high-temperature gasification to make 10-100 micron-sized silicon powder to obtain nano-silicon particles with an average particle size of 50nm, use hydrogen to activate nano-silicon, spray and gasify a certain amount of mixed solvent, and collect nano-silicon powder to o...

Embodiment 3

[0091] A kind of nano silicon silver paste, this paste comprises the following components and the raw material of content is made:

[0092]

[0093] The phosphorus content of the nano silicon powder is 15%; the average particle diameter of the silver powder is less than 1 μm; the organic solvent is selected from terpineol.

[0094] The additive is composed of 3 parts of polyoxyethylene polyoxypropylene polyoxyethylene block copolymer, 7 parts of lead-containing glass powder and 10 parts of deionized water.

[0095] The manufacture method of above-mentioned nano silicon silver paste, comprises the following processing steps:

[0096] (1) Preparation of phosphorus-containing nano silicon powder

[0097] First, use plasma high-temperature gasification to make 10-100 micron-sized silicon powder to obtain nano-silicon particles with an average particle size of 50nm, use hydrogen to activate nano-silicon, spray and gasify a certain amount of mixed solvent, and collect nano-silic...

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Abstract

The invention discloses nanometer silicon silver slurry, a method for preparing the nanometer silicon silver slurry, a method for producing a front-side contact p-type solar cell with the nanometer silicon silver slurry and the produced solar cell. When the nanometer silicon silver slurry is used for sintering solar cell metal electrodes, a silicon nitride (SiNx) antireflection film is etched by additives in the nanometer silicon silver slurry to make the slurry body directly make contact with a silicon wafer substrate; meanwhile, low-temperature eutectic contents are formed by nanometer silicon particles and silver paste to prevent metal silver from penetrating through an emitting electrode and damaging a p / n junction; phosphorus atoms are released by the additives and are diffused to a silicon wafer to carry out doping on a region wrapped with the slurry; after sintering is finished, nanometer silicon and silver are separated out in a eutectic mode, the adhesive force of a silver grid line is improved, and production steps are simplified.

Description

technical field [0001] The invention belongs to the technical field of nano-materials, and in particular relates to a nano-silicon silver paste, a preparation method and an application method thereof. Background technique [0002] At present, the process flow for producing ordinary front-contact p-type solar cells can be simply summarized as follows: 1. Silicon wafer cleaning and texturing, 2. POCl 3 Diffusion, 3. Cleaning phosphosilicate glass, 4. Depositing SiNx film, 5. Printing and drying the back silver aluminum paste and front silver paste, 6. Sintering silver paste and aluminum paste metal electrodes. Step 2POCl 3 Diffusion is a central part of the entire production process. In this step, phosphorous is diffused on the front side of the silicon wafer (that is, the sunny side). Convert the surface layer to n-type and form a p / n junction with the p-type substrate. Diffusion conditions determine the concentration and thickness of phosphorus in the n-type layer. In so...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01B1/16H01B1/22H01B13/00H01L31/18B82Y30/00
CPCY02P70/50
Inventor 刘国钧万剑成汉文蒋红彬沈晓燕沈晓东
Owner 苏州金瑞晨科技有限公司