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Semiconductor remover

A remover and semiconductor technology, applied in the processing of photosensitive materials, etc., can solve the problems of insufficient cleaning ability of photoresist, strong corrosion of semiconductor wafer substrate, low substrate corrosion, etc., and achieve the effect of good application prospect

Inactive Publication Date: 2014-01-15
杨桂望
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] The purpose of the present invention is to solve the problem that the photoresist cleaning agent in the prior art has insufficient cleaning ability to the photoresist and is highly corrosive to the semiconductor wafer substrate, and to provide a photoresist cleaning agent with high cleaning performance. ability and less substrate corrosive photoresist remover

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] The preparation of embodiment 1 cinnamyl imidazoline

[0045] Put 10ml of analytically pure diethylenetriamine in a four-necked flask, raise the temperature to 150°C, add 3ml of analytically pure toluene dropwise, add 22g of analytically pure cinnamic acid, stir under nitrogen, and then heat up to 170°C to start acyl After 5 hours of reaction, the temperature was raised to 240° C. to start cyclodehydration for 3 hours. After the reaction was completed, it was placed in a vacuum oven to dry to obtain cinnamyl imidazoline in a brown viscous shape.

Embodiment 21

[0046] Preparation of Example 21,3-bis(2-benzimidazolyl)-2-oxapropane

[0047] Take 10.8g of o-phenylenediamine and 7g of diglycolic acid, mix and dissolve them in 120ml of hydrochloric acid solution with a concentration of 6mol / L, stir mechanically, and reflux at 90°C for 12h. After the system is cooled, adjust the pH with ammonia water value until the solution becomes weakly alkaline, cool, dry, and recrystallize (50mL×3 times) with water-acetone (volume ratio 1:1) to obtain the target product in white powder form, which is 1,3-bis(2-benzene and imidazolyl)-2-oxapropane.

Embodiment 3

[0048] The preparation of embodiment 3 remover 1

[0049] 4g of cinnamyl imidazoline prepared in Example 1, 6g of 1,3-bis(2-benzimidazolyl)-2-oxapropane prepared in Example 2, 40g of N-methylpyrrolidone, 10g of tetramethylammonium hydroxide , 30g of citric acid / ammonium citrate buffered aqueous solution (the mass content ratio of citric acid and ammonium citrate is 10:1), 10g of propylene glycol monophenyl ether were mixed, stirred evenly, and the remover 1 was obtained.

[0050] Comparative Example Comparative Remover

[0051] Mix 40g N-methylpyrrolidone, 10g tetramethylammonium hydroxide, 30g citric acid / ammonium citrate buffer solution (the mass content ratio of citric acid and ammonium citrate is 10:1), 10g propylene glycol monophenyl ether, stir well , that is, compare the remover.

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Abstract

The invention provides semiconductor remover for removing photoresist residues. The semiconductor remover comprises a small-molecule inhibitor mixture, a solvent, quaternary ammonium hydroxide, citric acid / citrate buffer aqueous solution and alkyl diol aryl ether. The remover reduces the corrosion to chip patterns, metals such as aluminum and copper and nonmetal substrates such as silicon dioxide; particularly, the small-molecule inhibitor contained in the remover has excellent inhibition effect on the corrosion to metal aluminum.

Description

technical field [0001] The invention relates to the technical field of the semiconductor industry, in particular to a semiconductor remover used for removing photoresist residues in the semiconductor industry. Background technique [0002] In the usual semiconductor manufacturing process, a photoresist mask is formed on the surface of metals such as silicon dioxide, Cu (copper), and low-k materials, and pattern transfer is performed by wet or dry etching after exposure. Low temperature and fast cleaning process is an important direction for the development of semiconductor wafer manufacturing process. Negative photoresists with a thickness of more than 20 μm are gradually being used in the semiconductor wafer manufacturing process. At present, most photoresist cleaners in the industry have a good cleaning ability for positive photoresists, but they cannot completely remove the old photoresist on the wafer. Negative photoresist with cross-linked network structure after expos...

Claims

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Application Information

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IPC IPC(8): G03F7/42
Inventor 杨桂望
Owner 杨桂望
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