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Large-diameter ultra-long highly-pure silicon crystal cutting method and device

A technology for cutting equipment and silicon crystals, which is applied in stone processing equipment, work accessories, fine work devices, etc., to achieve the effect of improving efficiency and yield, improving material utilization, and improving yield

Active Publication Date: 2014-02-12
CHENGDU QINGYANG ELECTRONICS MATERIAL CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0011] The present invention aims at the above-mentioned deficiencies, and provides a large-diameter, ultra-long high-purity silicon crystal cutting process and equipment. In this process, electroplated diamond sand wires are used as cutters and different process steps to solve the problem of large-diameter, large-length and high-purity silicon crystals. Technical Difficulties in Surface Processing of Pure Silicon Crystal

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  • Large-diameter ultra-long highly-pure silicon crystal cutting method and device
  • Large-diameter ultra-long highly-pure silicon crystal cutting method and device
  • Large-diameter ultra-long highly-pure silicon crystal cutting method and device

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Embodiment Construction

[0032] The present invention will be further described below in conjunction with the accompanying drawings.

[0033] refer to figure 1 , figure 2 and image 3 , a cutting process for large-diameter, ultra-long high-purity silicon crystals, first of all, the high-purity silicon crystal 2 is bonded with a vibration-absorbing material and then excessively clamped to reduce the impact of vibration on the high-purity silicon crystal during cutting and improve the high-purity silicon Crystal force mode. Then use simple and intuitive drawing tools to draw the shape of the high-purity silicon crystal to be cut, arrange and process the drawn graphics, and then process them into a processing program in a certain format through the CNC automatic programming software system. Then, the high-purity silicon crystal 2 is cut by the electroplated diamond sand line 1, the main cutting motion is the vertical reciprocating motion of the electroplated diamond sand line 1, and the auxiliary cut...

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Abstract

The invention discloses a large-diameter ultra-long highly-pure silicon crystal cutting method and device. According to the technology, a highly-pure silicon crystal is bonded through vibration-absorption materials and then undergoes excessive clamping; a numerical control automatic programming software system is used for arranging cut highly-pure silicon crystal graphs; as main cutting movement of an electroplated diamond sand line is reciprocating movement, auxiliary cutting movement is self-rotation movement which cuts the highly-pure silicon crystal; the device comprises an electroplated diamond sand line, a workbench, a rocker arm, a crank and rocker mechanism and a graphite viscous mass. The electroplated diamond sand line serves as a cutter, the range in processing the highly-pure silicon crystal is greatly widened especially for the highly-pure silicon crystal with the large diameter and the ultra-large length. Thus, the cutting area in which the electroplated diamond sand line involved is little and the utilization rate of materials is effectively improved; the roughness of a processed surface is reduced and the efficiency and the rate of finished products are improved by controlling the cutting speed. As the vibration-absorption materials are adopted for bonding and then excessive clamping is adopted, the stressed manner of the highly-pure silicon crystal is improved and the rate of finished products is improved.

Description

technical field [0001] The invention relates to a silicon crystal cutting process and equipment, in particular to a large-diameter, ultra-long high-purity silicon crystal cutting process and equipment. Background technique [0002] Due to the inherent physical and mechanical properties of high-purity silicon crystal materials, the processing of large diameter, certain processing length and complex structure surface can be roughly divided into two situations: [0003] First, the processing of the standard round surface is carried out by excessive clamping of vibration-absorbing materials and forming diamond tool nesting processing. Process steps: tool clamping and alignment → high-purity silicon crystal clamping and alignment → nesting processing → surface treatment and grinding. [0004] Second, the processing of complex structure surfaces is carried out by standard general-purpose machine tools, excessive clamping of vibration-absorbing materials, and diamo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B28D5/04B28D7/04
Inventor 王全文杨蛟
Owner CHENGDU QINGYANG ELECTRONICS MATERIAL CO LTD