Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor device and manufacturing method thereof

A semiconductor and device technology, applied in the field of semiconductor devices and their manufacturing, can solve problems such as substrate damage

Active Publication Date: 2016-08-24
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This poses challenges to production equipment and production processes
[0003] On the other hand, ion implantation may cause substrate damage
thus requiring additional annealing to remove damage

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0010] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concept of the present disclosure.

[0011] Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. The figures are not drawn to scale, with certain details exaggerated and possibly omitted for clarity of presentation. The shapes of the various regions and layers shown in the figure, as well as their relative sizes and positional relationships are only exemplary, and may deviate due to manufacturing tolerances or technical limitations in practice, and those skilled in the art will Regions / layers with different shapes, s...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The application discloses a semiconductor device and a manufacturing method thereof. An exemplary method includes: growing a first epitaxial layer on a substrate; growing a second epitaxial layer on the first epitaxial layer; forming a sacrificial gate stack on the second epitaxial layer; using the sacrificial gate stack as a mask, selectively etching The second epitaxial layer; growing and in-situ doping the third epitaxial layer on the first epitaxial layer; forming sidewalls on both sides of the sacrificial gate stack; using the sidewalls as a mask, selectively etching the third epitaxial layer and the first epitaxial layer an epitaxial layer; and growing and in-situ doping a fourth epitaxial layer on the substrate to form source / drain regions.

Description

technical field [0001] The present disclosure relates to the field of semiconductors, and more particularly, to a semiconductor device and a manufacturing method thereof. Background technique [0002] As the device size shrinks day by day, the short channel effect becomes more and more obvious. To suppress the short-channel effect, one approach is to reduce the junction depth of the source / drain extensions. To form a shallow extension region, low-energy ions need to be implanted during extension region implantation, followed by ultrafast annealing to activate the implanted ions. This poses challenges to production equipment and production processes. [0003] On the other hand, ion implantation may cause substrate damage. An additional annealing treatment is thus required to remove the damage. Contents of the invention [0004] An object of the present disclosure is, at least in part, to provide a semiconductor device and a method of manufacturing the same. [0005] Ac...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336H01L29/08H01L29/78
CPCH01L29/0847H01L29/66568H01L29/78H01L29/66545H01L29/6659H01L29/66636H01L29/7833H01L29/1054H01L29/165H01L29/7848H01L29/66477
Inventor 尹海洲蒋葳朱慧珑
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI