A top-emitting organic electroluminescent device and its manufacturing method
A technology of electroluminescence and top emission, which is applied in the manufacture of semiconductor/solid-state devices, electric solid-state devices, electrical components, etc. It can solve the problem of not considering the change of viewing angle, and achieve the effect of avoiding the change.
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[0105] The preparation method of formula 2-1~2-5 compound is as follows:
[0106]
[0107] Under nitrogen protection, 7.4 grams of bis(o-bromophenyl)dimethylsilane (see J.Organomet.Chem.1984,271,319-326 for the synthesis method) (20mmol) was added to a 500ml three-necked flask, and 150ml of anhydrous ether was added dissolve. Cool the reaction system to -80°C, slowly add 1.5M tert-butyllithium (59ml, 88mmol) dropwise, keep the reaction mixture at -80°C during the dropwise addition, continue to stir at this temperature for 1 hour after the dropwise addition is complete . Then add 3.65g benzophenone (20mmol), stir at low temperature for 30 minutes, then remove the cold bath, let the reaction system warm up to room temperature naturally, and continue to stir at room temperature for 3 hours. The reaction was quenched by adding saturated ammonium chloride solution, the product was extracted with ethyl acetate, and the organic phase was dried over anhydrous magnesium sulfate. ...
Embodiment 1
[0135] Sputter-deposit Ag on the glass substrate as a reflective layer with a thickness of 150nm, sputter 10nm ITO as the anode of the device, and etch out the required pattern, use O 2 Plasma treatment for 3 minutes. The resulting substrate was placed in a vacuum, and a mixture of MTDATA and F4TCNQ was deposited by co-evaporation as a hole-injection layer (HIL) at 130 nm, where the weight of F4TCNQ was 4% of the weight of MTDATA. Next, 10 nm of NPB was deposited as a hole transport layer (HTL). A 30nm mixture of ADN and DPAVB was co-evaporated and deposited as the light-emitting layer, wherein the weight of DPAVB was 5% of the weight of AND. Then 20nm of Bphen was deposited as electron transport layer (ETL). Keeping the vacuum constant, through Li 3 N is decomposed during the evaporation process (temperature 600°C) to evaporate 1nm Li as the electron injection layer (EIL), 20nm Ag as the cathode, and 40nm organic material with the structure of formula 1-1 as the covering l...
Embodiment 2
[0141] Sputter-deposit Ag on the glass substrate as a reflective layer with a thickness of 150nm, sputter 10nm ITO as the anode of the device, and etch out the required pattern, use O 2 Plasma treatment for 3 minutes. The resulting substrate was placed in a vacuum, and a mixture of MTDATA and F4TCNQ was deposited by co-evaporation as a hole-injection layer (HIL) at 170 nm, where the weight of F4TCNQ was 4% of the weight of MTDATA. Next, 10 nm of NPB was deposited as a hole transport layer (HTL). The mixture of CBP and Ir(ppy)3 of co-evaporation deposition 30nm is used as the light-emitting layer again, wherein Ir(ppy) 3 The weight is 5% of the weight of the CBP. Then 20nm of Bphen was deposited as electron transport layer (ETL). Keep Vacuum Constant, by KBH 4 During the evaporation process (at a temperature of 400°C), 1nm of K was deposited as an electron injection layer (EIL), 20nm of Ag was deposited as a cathode, and 40nm of an organic material with a structure of formu...
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