Supercharge Your Innovation With Domain-Expert AI Agents!

A light-emitting diode wiring electrode

A technology for light-emitting diodes and wire-bonding electrodes, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of off-line, affecting the quality of light-emitting diodes, and the bonding force between leads and electrodes cannot be greatly improved.

Active Publication Date: 2016-01-06
LIYANG TECH DEV CENT
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this electrode structure can increase the connection quality of the electrodes to a certain extent, because the electrodes are planar electrodes, after wiring, the connection between the leads and the electrodes is still limited to the plane range of the electrodes, so the bonding force between the leads and the electrodes remains the same. It cannot be greatly improved, and there is a possibility of being off-line, which will affect the quality of LEDs

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A light-emitting diode wiring electrode
  • A light-emitting diode wiring electrode
  • A light-emitting diode wiring electrode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0014] see Figure 1-3 Let's introduce the light-emitting diode wire bonding electrode proposed by the present invention.

[0015] see figure 1 , figure 1 It is a cross-sectional view of a wire-bonding electrode of a light-emitting diode, wherein the wire-bonding electrode includes upper and lower parts, which are a flat electrode 10 and a bump-roughened electrode 20 . The bump-roughened electrode 20 includes a first bump-roughened electrode 21 , a plurality of second bump-roughened electrodes 22 and a plurality of third bump-roughened electrodes 23 .

[0016] see image 3 The first roughened bump electrode 21 is located at the center of the wiring electrode of the light-emitting diode, and the plurality of second roughened bump electrodes 22 are located on intersecting lines perpendicular to each other centered on the first roughened bump electrode 21, so as to The first roughened bump electrodes 21 form a cross shape; a plurality of third roughened bump electrodes 23 ar...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
surface roughnessaaaaaaaaaa
surface roughnessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a wire bonding electrode of a light emitting diode. The wire bonding electrode of the light emitting diode is a square electrode and is divided into an upper part and a lower part, the lower part of the wire bonding electrode is a flat electrode, the upper part of the wire bonding electrode is a protruding block coarsening electrode, the upper surface of the protruding block coarsening electrode and all the lateral faces are of coarsening structures, and the surface roughness of each coarsening structure is higher than 10nm and lower than 15nm.

Description

technical field [0001] The invention belongs to the technical field of light emitting diodes, in particular to a wire bonding electrode of a light emitting diode. Background technique [0002] Semiconductor light-emitting diodes (LightEmittingDiode) are increasingly widely used, especially in lighting, which tends to replace incandescent and fluorescent lamps. A light-emitting diode is a light-emitting element made of semiconductor materials. The element has two electrode terminals. A voltage is applied between the terminals, and a very small current is passed through. The remaining energy can be excited and released in the form of light through the combination of electron holes. , which is the basic light-emitting principle of light-emitting diodes. Light-emitting diodes are different from ordinary incandescent light bulbs. Light-emitting diodes are cold-emitting, with low power consumption, long component life, no warm-up time, and fast response. In addition, they are sma...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/38
CPCH01L33/387H01L33/62
Inventor 丛国芳
Owner LIYANG TECH DEV CENT
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com