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Trench Schottky diode structure and manufacturing method thereof

A technology of Schottky diodes and manufacturing methods, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems that the forward voltage drop VF is difficult to reduce, etc., to reduce VF, increase the structure area, and improve the device performance effect

Inactive Publication Date: 2014-02-26
CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] In view of the above-mentioned shortcoming of the prior art, the object of the present invention is to provide a trench type Schottky diode structure and its manufacturing method, for solving the forward voltage drop of the trench type Schottky diode in the prior art Difficult to lower VF etc.

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  • Trench Schottky diode structure and manufacturing method thereof
  • Trench Schottky diode structure and manufacturing method thereof
  • Trench Schottky diode structure and manufacturing method thereof

Examples

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Embodiment 1

[0055] Such as figure 2 As shown, this embodiment provides a trench Schottky diode structure, at least including:

[0056] a substrate 201 of the first conductivity type;

[0057] A plurality of deep trench structures, including a plurality of deep trenches formed in the substrate 201, a dielectric layer 203 bonded to the surface of each deep trench, and a conductive material 204 filled in each deep trench; Wherein, a shallow trench is formed in the substrate 201 between two adjacent deep trench structures;

[0058] a metal-semiconductor compound 209 formed on the surface of the substrate 201 and the surface of the shallow trench;

[0059] The front electrode layer 211 covers the surface of the metal-semiconductor compound 209 and the deep trench structure.

[0060] As an example, the trench Schottky diode structure further includes a heavily doped layer 210 of the first conductivity type formed on the surface layer of the substrate 201 and the inner surface layer of the s...

Embodiment 2

[0068] Such as Figure 3 to Figure 9 As shown, this embodiment provides a method for manufacturing a trench Schottky diode structure, which at least includes the following steps:

[0069] Such as Figure 3 ~ Figure 4 As shown, step 1) is first performed, providing a substrate 201 of the first conductivity type, forming a plurality of deep trenches arranged at intervals in the substrate 201, forming a dielectric layer 203 on the surface of the deep trenches, and Conductive material 204 is deposited in the deep trench.

[0070] The substrate 201 can be a silicon substrate, a silicon germanium substrate, a germanium substrate or a III-V group compound, such as gallium nitride, gallium arsenide, etc. In this embodiment, the substrate 201 is a silicon substrate. The substrate, correspondingly, the metal-semiconductor compound 209 is a metal silicide. Of course, all other expected substrates that can be used to fabricate Schottky diodes should be applicable to the present inventi...

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Abstract

The invention provides a trench Schottky diode structure and a manufacturing method thereof. The trench Schottky diode structure at least comprises: a substrate of a first conductive type, a plurality of deep trench structures, a metal semiconductor compound, and a positive electrode layer. To be specific, the plurality of deep trench structures include a plurality of deep grooves formed in the substrate, dielectric layers combined to the surfaces of all the deep trenches and conducting materials filling in all the deep trenches; and a shallow trench is formed in the substrate between each two adjacent deep trench structures. The metal semiconductor compound is formed on the surface of the substrate and the surfaces of the shallow trenches. And the positive electrode layer covers the surfaces of the metal semiconductor compound and the deep trench structures. According to the invention, the following beneficial effects are realized: on the basis of technical improvement, the schottky barrier layer at the surface of the substrate has a shallow groove structure; and compared with the conventional planform structure, the area is substantially increased, thereby effectively reducing a forward voltage drop VF and improving the device performance. Moreover, the structure and the manufacturing method are simple; and the effect is obvious, so that the structure and the manufacturing method are suitable for industrial production.

Description

technical field [0001] The invention relates to a semiconductor device and a manufacturing method thereof, in particular to a trench Schottky diode structure and a manufacturing method thereof. Background technique [0002] With the continuous development of semiconductor technology, power devices, as a new type of device, are widely used in fields such as disk drives and automotive electronics. Power devices need to be able to withstand large voltage, current and power loads. However, existing devices such as MOS transistors cannot meet the above requirements. Therefore, in order to meet the needs of applications, various power devices have become the focus of attention. [0003] Existing Schottky diodes are generally metal-semiconductor made of precious metals (gold, silver, aluminum, platinum, etc.) device. Because there are a large number of electrons in the N-type semiconductor and only a small amount of free electrons in the noble metal, electrons diffuse from the N...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/872H01L29/06H01L21/329
CPCH01L29/8725H01L29/66143
Inventor 黄晓橹蒋建陈逸清
Owner CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO LTD