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Laminated chip wafer-level copper bump packaging structure

A packaging structure and wafer-level technology, applied in the direction of electrical components, electrical solid devices, circuits, etc., to achieve high integration, avoid signal crosstalk, high-frequency noise, and low noise

Inactive Publication Date: 2014-03-12
NINGBO CHIPEX SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide a wafer-level copper bump packaging structure for stacked chips, which solves the problems of size, performance and cost caused by traditional packaging.

Method used

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  • Laminated chip wafer-level copper bump packaging structure
  • Laminated chip wafer-level copper bump packaging structure
  • Laminated chip wafer-level copper bump packaging structure

Examples

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Embodiment Construction

[0025] Below in conjunction with specific embodiment, further illustrate the present invention. It should be understood that these examples are only used to illustrate the present invention and are not intended to limit the scope of the present invention. In addition, it should be understood that after reading the teachings of the present invention, those skilled in the art can make various changes or modifications to the present invention, and these equivalent forms also fall within the scope defined by the appended claims of the present application.

[0026] Embodiments of the present invention relate to a wafer-level copper bump packaging structure of stacked chips, such as Figure 8 and Figure 9 As shown, it includes a laminated chip, the laminated chip includes a first silicon carrier layer and a second silicon carrier layer, and the second silicon carrier layer is laid on the bottom of the first silicon carrier layer to form a raised area; the An electrical isolation ...

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Abstract

The invention relates to a laminated chip wafer-level copper bump packaging structure which comprises a laminated chip composed of a first silicon bearing layer and a second silicon bearing layer, wherein the second silicon bearing layer is laid on the bottom of the first silicon bearing layer to form a bulge region; an electric insulating layer respectively grows on the bottom of the first silicon bearing layer and the bulge region, and a first opening and a second opening are left; a first electric connection point is arranged in the first opening; a second electric connection point is arranged in the second opening; a photoresistance layer grows on each electric insulating layer; a metal layer grows on the photoresistance layer; the metal layers are covered on the first electric connection point and the second electric connection point; the first electric connection point is subjected to repeated electroplating to form a first copper bump; the second electric connection point is subjected to repeated electroplating to form a second copper bump; the tops of the first copper bump and second copper bump are on the same horizontal surface; and metal balls with the same height grow on the tops of the first copper bump and second copper bump. The structure can ensure better connection in a flip-chip process.

Description

technical field [0001] The invention relates to wafer-level packaging in the technical field of semiconductor packaging, in particular to a wafer-level copper bump packaging structure for stacked chips. Background technique [0002] The current packaging technology is still traditional packaging as the mainstream, although after entering the 21st century, wafer-level advanced packaging has been widely used in image sensors, flash memory, logic devices, power chips and other industries, and the market share of advanced packaging has also been maintained year by year However, there are still many deficiencies in advanced packaging technology, and there are still many technical problems that need to be solved. Before these problems are solved, some chips must be packaged with traditional technology. [0003] The microelectronics industry is developing at a speed consistent with Moore's Law, which determines the integration of more field effect transistors, various resistors, ca...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/488H01L21/60
CPCH01L24/82
Inventor 俞国庆邵长治谢皆雷廖周芳吴超罗立辉吴伟峰
Owner NINGBO CHIPEX SEMICON